Rezultaty Documents, reports (5) Requirements of design tools for flexible electronics Report about the requirements of design tools for flexible electronics. Requirements of design tools for flexible electronics update Updated report on the requirements of design tools for flexible electronics Preliminary Compact Model specifications Report about the needed specifications that compact models for OTFTs and AOS TFTs must satisfy. ‘Compact Model specifications revision Updated report about the specifications that compact models for OTFTs and AOS TFTs must satisfy. ‘EDA tools integration and simulation performances evaluation Report about the integration of the developed compact models in EDA tools and the evaluation of their simulation performances Demonstrators, pilots, prototypes (1) Final release of TCAD software containing all new physical electrical device level models and documentation Release of the TCAD software which will contain the new physical models for the effects governing the behavior of OTFTs and AOS TFTs Besides release of the associated documentation Publikacje Conference proceedings (55) Continuous Charge-Based Current Model for Organic TFT Derived From Gaussian DOS Autorzy: F. Hain, C. Lammers, F. Horst, F. Hosenfeld, B. Iñiguez, A. Kloes Opublikowane w: International Conference on Organic Electronics, 2015 Wydawca: WASET Self-consistent parameter extraction method for organic-field effect transistors with power-law dependent mobility Autorzy: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux and Gilles Horowitz Opublikowane w: Material Research Society Fall Meeting, 2015 Wydawca: Cambridge university press Charge-based Modelling of the Channel Current in Organic Field Effect Transistors Considering Injection Effects Autorzy: F. Hain, C. Lammers, F. Hosenfeld, Hagen Klauk, Ute Zschieschang, B. Iñiguez, A. Kloes Opublikowane w: Electrochemical Society Meeting, Chicago, 2015 Wydawca: ECS Transactions Characterization and modeling of temperature effects in Amorphous Oxide TFTs Autorzy: B. Iñiguez, O. Moldovan, A. Cerdeira and M. Estrada Opublikowane w: 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Low-frequency noise modelin in orgànic and IGZO TFTs Autorzy: B. Iñiguez, G. Uriarte, W. E. Muhea and T. Gneiting Opublikowane w: MOS-AK Workshop, 2018 Wydawca: Wladek Gabrinski (EPFL) esign Oriented Modeling of TFTs for Flexible Electronics,” 8th International Conference on CAD for TFT transistors (CAD-TFT) Autorzy: B. Iñiguez Opublikowane w: 8th International Conference on CAD for TFT transistors (CAD-TFT),, 2018 Wydawca: IEEE Electron Devices Society Analytical modeling of non-linear injection effects in organic TFT Autorzy: A. Kloes, M. Graef, F. Hain, H. Klauk, J. Pruefer Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Realistic Small-Signal AC Simulation of a Bottom-Gate OTFT Autorzy: M. Graef, J. Pruefer, A. Kloes Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Mathematical and Semi-Physical Compact Modeling for Emerging Technologies Autorzy: Y. Courant, A. Nathan, F. Mohamed Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Modelling of TFT s-Parameters and its Impact on Cut-Off Frequency Extraction Autorzy: X. Chen Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Modelling Diode Reverse Recovery for Wireless Power Transfer Autorzy: P. Fan, F. Mohamed, A. Nathan Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge A unified charge-based TFT core compact model Autorzy: S. Mijalkovic Opublikowane w: International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Guidelines for robust compact model coding with Verilog-A Autorzy: S. Mijalkovic Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameters Autorzy: A. Kloes, F. Hain, M. Graef, B. Iñiguez Opublikowane w: Proceedings 231st ECS Meeting, New Orleans, 2017 (invited), 2017 Wydawca: ECS The Electrochemical Society Performant Physical and Spice Model of Organic TFT Autorzy: Y. Bonnassieux Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Design Tools Challenges for Large Area Electronics Autorzy: A. Nejim Opublikowane w: Digest of the 2017 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2017 Wydawca: IEEE Electron Devices Society, University of Cambridge Physics-Based Compact Model for Organic Thin-Film Transistors with a Universal Charge Expression for Quasi-Static Operation Autorzy: A. Kloes, J. Pruefer, J. Leise, G. Darbandy, and H. Klauk Opublikowane w: 235st ECS Meeting, 2019 Wydawca: The Electrochemical Society Compact Modeling of I-V and C-V Characteristics in OTFTs from 125K to 350K, Autorzy: B. Iniguez, H. Cortes-Ordonez, A. Cerdeira, M. Estrada, S. Jacob, C. Haddad, G. Ghibaudo, and F. Mohamed Opublikowane w: 235th ECS Meeting, 2019 Wydawca: The Electrochemical Society Simulation of CdSe Based Quantum Dot Hybrid Light Emitting Diodes Using Tcad Continuous Models Autorzy: R. Grassi, I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, S. Chourou, M. Townsend, and A. Nejim Opublikowane w: 235st ECS Meeting, 2019 Wydawca: ECS The Electrochemical Society Compact Modeling of Non-Linear Contact Resistance in Staggered and Coplanar Organic Thin-Film Transistors Autorzy: Jakob Pruefer, Benjamin Iñiguez, Hagen Klauk, Alexander Kloes Opublikowane w: Proceedings ICOE 2018, 2018 Wydawca: Université de Bordeaux UMEM based 1/f noise model for amorphous ESL IGZO TFTs Autorzy: W. E. Muhea, T. Gneiting, B. Iñiguez Opublikowane w: 1st Latin American Electron Devices Conference, 2019 Wydawca: IEEE Electron Devices Society Parameter extraction and modeling of OTFTS from 150K to 300K Autorzy: Harold Cortes-Ordonez, Clara Haddad, Stephanie Jacob, Gerad Ghibaudo, Firas Mohamed, Magali Estrada, Antonio Cerdeira and Benjamin Iñiguez Opublikowane w: 1st Latin American Electron Devices Conference, 2018 Wydawca: IEEE Electron Devices Society Charge-Based DC/AC Compact Modeling of Organic TFTs Autorzy: A. Kloes, Jakob Pruefer, Jakob Leise, Ghader Darbandy Opublikowane w: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018 Wydawca: IEEE Electron Devices Society Parameter extraction method for disordered organic field-effect transistors Autorzy: Sungyeop Jung, Vincent Mosser, Yvan Bonnassieux, Gilles Horowitz Opublikowane w: The Polymer Society of Korea Spring Meeting, 2017 Wydawca: The Polymer Society of Korea Impact of mechanical deformation on flexible thin film transistor performance Autorzy: A. Nejim Opublikowane w: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018 Wydawca: IEEE Electron Devices Society Strong physical background in OTFT compact model Autorzy: Y. Bonnassieux Opublikowane w: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018 Wydawca: IEEE Electron Devices Society Oxide Electronics Autorzy: A Nathan Opublikowane w: 2018 International Workshop on Computer Aided Design of Thin-Film Transistor (CAD-TFT), 2018 Wydawca: IEEE Electron Devices Society Device-Circuit Interactions in Oxide TFT Low Power Circuits and Systems (invited) Autorzy: A Nathan Opublikowane w: IEEE Nanotechnology Materials and Devices Conference (NMDC), 2018 Wydawca: IEEE Transparent and Oxide Nano-Electronics Autorzy: A. Nathan Opublikowane w: IEEE International Flexible Electronics Technology Conference (invited), 2018 Wydawca: IEEE Physical SPICE Model of Organic Thin Film Transistor Autorzy: Y. Bonnassieux, S. Jung, and G. Horowitz Opublikowane w: Book of Abstracts of the 231 Electrochemical Society (ECS) Meeting, 2017 Wydawca: ECS - The Electrochemical Society Ultralow power subthreshold inorganic and organic thin film transistors Autorzy: C Jiang, A. Nathan Opublikowane w: LOPEC 2018, 2018 Wydawca: oe-a Organic and Printed Electronics Association Compact modeling and parameter extraction of Amorphous Oxide TFTs Autorzy: B Iñiguez Opublikowane w: IEEE EDS Mini-Colloquium, Spanish Conference on Electron Devices (invited), 2018 Wydawca: * TFT Modelling for Circuits Simulation Autorzy: A. Nathan, X. Cheng, G. Yao, and S. Lee Opublikowane w: International Thin-film Transistor Conference (ITC) 2015, Paris, France, Feb. 2015, 2015 Wydawca: T. Mohammed-Brahim (Rennes 1 University, France) Charge-Based Current Model of Organic TFT for All Operation Regions with a Close Link to Electrical Device Parameters Autorzy: A. Kloes, F. Hain, M. Graef, S. Jacob, B. Iniguez Opublikowane w: Workshop on Flexible Electronics 2016, Tarragona (Spain), 2016 Wydawca: B. Iñiguez Defining the injection barrier at metal/organic semiconductor interface with a Gaussian density-of-states Autorzy: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux and Gilles Horowitz Opublikowane w: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015 Wydawca: T. Mohammed-Brahim (Rennes 1 University, France) Threshold Voltage and Conduction Mechanisms in Disordered Semiconductor-based Thin Film Transistors Autorzy: S. Lee, A. Nathan Opublikowane w: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015 Wydawca: Information not available Analytically correlated charge transport and injection in solution-processed organic field-effect transistors Autorzy: C.-H. Kim, S. Jung, Y. Bonnassieux, J. E. Anthony, I. Kymissis, M.-H. Yoon, and G. Horowitz Opublikowane w: European Conference on Molecular Electronics (ECME) 2015, 2015 Wydawca: Paolo Samorì Closed-Form Charge-Based Current Model of Organic TFT Including Non-Linear Injection Effects Autorzy: A. Kloes, F. Hain, M. Graef, B. Iniguez Opublikowane w: MOS-AK ESSDERC/ESSCIRC Workshop, Lausanne, 2016, 2016 Wydawca: Wladek Grabinski Ultra-thin gate dielectric for organic field-effect transistors Autorzy: M. Albariqi, T. Alhathal, S. Jung, Y. Bonnassieux and G. Zucchi Opublikowane w: International Thin-Film Transistor Conference (ITC), Rennes, France, February 26-27 (2015), 2015 Wydawca: T. Mohammed-Brahim (Rennes 1 University, France) Oxide Semiconductor TFT Technology for Circuits and Systems”, 7th International Conference on CAD for TFT transistors Autorzy: A. Nathan Opublikowane w: 7th International Conference on CAD for TFT transistors 2016, 2016 Wydawca: Information not available Modeling organic field effect-transistors with power-law dependent mobility and contact resistance Autorzy: S. Jung, J. W. Jin, V. Mosser, Y. Bonnassieux and G. Horowitz Opublikowane w: International Thin-Film Transistor Conference (ITC) 2016, 2016 Wydawca: Han-Ping D. Shieh (National Chiao Tung University, Taiwan) Gate bias dependence of mobility in organic field-effect transistors with Gaussian density-ofstates Autorzy: S. Jung, J. W. Jin, Y. Bonnassieux and G. Horowitz Opublikowane w: International Conference on Organic Electronics (ICOE), Bratislava, Slovakia, June 13-15 (2016), 2016 Wydawca: Martin Weis Design Tools for TFT Circuits and Systems Autorzy: A. Nathan Opublikowane w: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015 Wydawca: Information not available TCAD for Compact Model Development Get Real”, 7th International Conference on CAD for TFT transistors Autorzy: A. Nejim Opublikowane w: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015 Wydawca: Information not available N-type organic field-effect transistors with high performance and low operation voltage Autorzy: S. Jung, M. Al-Bariqi, G. Gruntz, Y. Nicolas, L. Hirsch, T. Toupance, Y. Bonnassieux and G. Horowitz Opublikowane w: International Conference on Organic Electronics (ICOE), Erlangen, Germany, June 15-17 (2015), 2015 Wydawca: WASET Recent Progress in TFT Compact Modeling and Parameter Extraction Techniques Autorzy: B. Iñiguez Opublikowane w: 7th International Conference on CAD for TFT transistors, Beijing (China) October 2015, 2015 Wydawca: Information not available Oxide thin film transistor technology: Capturing device-circuit interactions Autorzy: Arokia Nathan, Sungsik Lee, Sanghun Jeon, Reza Chaji Opublikowane w: 2015 IEEE International Electron Devices Meeting (IEDM), 2015, Strona(/y) 6.7.1-6.7.4, ISBN 978-1-4673-9894-7 Wydawca: IEEE DOI: 10.1109/IEDM.2015.7409643 Fundamental difference in the electrical characteristics of organic rectifying diodes under non-degenerate and degenerate regime related with a Gaussian density-of-states Autorzy: S. Jung, Y. Bonnassieux and Gi- Horowitz Opublikowane w: European Materials Research Society Spring Meeting (E-MRS), Lille, France, May 11-15 (2015), 2015 Wydawca: European Materials Research Society Large Area Electronics: From Devices to Circuits and Systems Autorzy: A. Nathan Opublikowane w: International Conference on Electrical & Electronic Technology, Selangor, Malaysia, August 2016, 2016 Wydawca: Universiti Putra Malaysia Device-Circuit Interactions in Thin Film Transistor Circuits and Systems Autorzy: X. Cheng, S. Lee, A. Nathan Opublikowane w: International Thin-Film Transistor Conference (ITC), Hsinchu, Taiwan, February 25-26 (2016), 2016 Wydawca: National Chiao Tung University Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors Autorzy: Y. Hernandez-Barrios, F. Avila, M. Estrada, A. Cerdeira, O. Moldovan, B. Iniguez, R. Picos Opublikowane w: 2016 13th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE), 2016, Strona(/y) 1-4, ISBN 978-1-5090-3511-3 Wydawca: IEEE DOI: 10.1109/ICEEE.2016.7751186 Characterization and modeling of Organic and Oxide Semiconductor TFTs Autorzy: M. Estrada, A. Cerdeira, A. Castro-Carranza, L. F. Marsal, J. Pallarès, and B. Iñiguez Opublikowane w: Workshop on Flexible Electronics, Tarragona (Spain), June 2016, 2016 Wydawca: B. Iñiguez (Univ. Rovira i Virgili, Spain) TFT Circuit Building Blocks and Design Tools for Flexible Electronics Autorzy: A. Nathan Opublikowane w: Workshop on Flexible Electronics, Tarragona (Spain), June 29 2016, 2016 Wydawca: Benjamin Iniguez, Universitat Rovira i Virgili, Spain Compact modeling approaches for organic and oxide TFTs Autorzy: B. Iñiguez Opublikowane w: Compact modeling approaches for organic and oxide TFTs,” MOS-AK Workshop, Dresden (Germany), March 18 2016., 2016 Wydawca: Wladek Grabinski Charge-Based Compact Model for DC Current in Organic TFT Including Non-Linear Injection Effects with a Close Link to Electrical Device Parameter Autorzy: Alexander Kloes, Franziska Hain, Michael Graef, B. Iniguez Opublikowane w: Proceedings 231st ECS Meeting, 2017 Wydawca: The Electrochemical Society Peer reviewed articles (30) Injection barrier at metal/organic semiconductor junctions with a Gaussian density-of-states Autorzy: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz Opublikowane w: Journal of Physics D: Applied Physics, Numer 48/39, 2015, Strona(/y) 395103, ISSN 0022-3727 Wydawca: Institute of Physics Publishing DOI: 10.1088/0022-3727/48/39/395103 Charge density increase in submonolayer organic field-effect transistors Autorzy: T. Cramer, A. Kyndiah, A. Kloes, M. Murgia, B. Fraboni, F. Biscarini Opublikowane w: Physical Review B, Numer 91/20, 2015, ISSN 1098-0121 Wydawca: American Physical Society DOI: 10.1103/PhysRevB.91.205305 Localized Tail States and Electron Mobility in Amorphous ZnON Thin Film Transistors Autorzy: Sungsik Lee, Arokia Nathan, Yan Ye, Yuzheng Guo, John Robertson Opublikowane w: Scientific Reports, Numer 5, 2015, Strona(/y) 13467, ISSN 2045-2322 Wydawca: Nature Publishing Group DOI: 10.1038/srep13467 Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays Autorzy: Sungsik Lee, Sanghun Jeon, Reza Chaji, Arokia Nathan Opublikowane w: Proceedings of the IEEE, Numer 103/4, 2015, Strona(/y) 644-664, ISSN 0018-9219 Wydawca: Institute of Electrical and Electronics Engineers DOI: 10.1109/JPROC.2015.2405767 Deep Subthreshold TFT Operation and Design Window for Analog Gain Stages Autorzy: Xiang Cheng, Sungsik Lee, Arokia Nathan Opublikowane w: IEEE Journal of the Electron Devices Society, Numer 6, 2018, Strona(/y) 195-200, ISSN 2168-6734 Wydawca: Institute of Electrical and Electronics Engineers Inc. DOI: 10.1109/jeds.2018.2789579 Numerical Modeling of an Organic Electrochemical Transistor Autorzy: Anna Shirinskaya, Gilles Horowitz, Jonathan Rivnay, George Malliaras, Yvan Bonnassieux Opublikowane w: Biosensors, Numer 8/4, 2018, Strona(/y) 103, ISSN 2079-6374 Wydawca: Multidisciplinary Digital Publishing Institute (MDPI) DOI: 10.3390/bios8040103 Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors Autorzy: M. Estrada, Y. Hernandez-Barrios, A. Cerdeira, F. Ávila-Herrera, J. Tinoco, O. Moldovan, F. Lime, B. Iñiguez Opublikowane w: Solid-State Electronics, Numer 135, 2017, Strona(/y) 43-48, ISSN 0038-1101 Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.sse.2017.06.030 An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior Autorzy: Y. Hernandez-Barrios, A. Cerdeira, M. Estrada, B. Iñiguez Opublikowane w: Solid-State Electronics, Numer 149, 2018, Strona(/y) 32-37, ISSN 0038-1101 Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.sse.2018.08.006 Employing Pneumatic Nozzle Printing for Controlling the Crystal Growth of Small Molecule Organic Semiconductor for Field-Effect Transistors Autorzy: Shyuan Yang, Steve Park, Johannes Bintinger, Yvan Bonnassieux, John Anthony, Ioannis Kymissis Opublikowane w: Advanced Electronic Materials, Numer 4/6, 2018, Strona(/y) 1700534, ISSN 2199-160X Wydawca: Wiley online DOI: 10.1002/aelm.201700534 High-Speed Plastic Integrated Circuits: Process Integration, Design, and Test Autorzy: Miguel Torres-Miranda, Andreas Petritz, Alexander Fian, Christine Prietl, Herbert Gold, Hassan Aboushady, Yvan Bonnassieux, Barbara Stadlober Opublikowane w: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Numer 7/1, 2017, Strona(/y) 133-146, ISSN 2156-3357 Wydawca: IEEE Circuits and Systems Society DOI: 10.1109/jetcas.2016.2611823 Determination and modelin of Flicker Noise mechanisms in polymeric TFTs Autorzy: G. Uriarte, S. Jacob, G. Ghibaudo, T. Gneiting and B. Iñiguez Opublikowane w: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979 Wydawca: American Institute of Physics A complete charge-based capacitance model for IGZO TFTs Autorzy: Oana Moldovan, Alejandra Castro-Carranza, Magali Estrada, Antonio Cerdeira, François Lime, Benjamin Iñiguez Opublikowane w: IEEE Electron Device Letters (revised and re-submitted), 2019, ISSN 0741-3106 Wydawca: Institute of Electrical and Electronics Engineers Parameter extraction and modeling of OTFT from 150 to 300 K Autorzy: H. Cortés, S. Jacob, C. Haddad, G. Ghibaudo, F. Mohamed, M. Estrada, A. Cerdeira, B. Iñiguez Opublikowane w: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979 Wydawca: American Institute of Physics Analysis of Flicker Noise in IGZO ESL TFTs Autorzy: G. Uriarte, T. Gneiting and B. Iñiguez Opublikowane w: IEEE Transactions on Electron Devices (submitted), 2019, ISSN 0018-9383 Wydawca: Institute of Electrical and Electronics Engineers Flicker noise analysis and unified modeling for ESL a- IGZO TFTs from 298 to 333 K Autorzy: W. E. Muhea, T. Gneiting, B. Iñiguez Opublikowane w: Journal of Applied Physics (submitted, under revision), 2019, ISSN 0021-8979 Wydawca: American Institute of Physics Analysis and compact modelin of gate capacitance in Organic Thin Film Transistors Autorzy: H. Cortés, S. Jacob, F. Mohamed, G. Ghibaudo, B. Iñiguez Opublikowane w: IEEE Transactions on Electron Devices (revised and re-submitted), 2019, ISSN 0018-9383 Wydawca: Institute of Electrical and Electronics Engineers Modelling and optimization of quantum dot–based hybrid light emitting diodes using Silvaco’s software Autorzy: I. Arroyo, B. Iñiguez, T. Drevon, A. Plews, A. Nejim Opublikowane w: Journal of Applied Physics (submitted), 2019, ISSN 0021-8979 Wydawca: American Institute of Physics 1/f noise analysis in high mobility small-molecule Organic Thin Film Transistors (in preparation) Autorzy: Wondwosen E. Muhea, K. Romanjek, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo, B. Iñiguez Opublikowane w: IEEE Electron Device Letters (in preparation), 2019, ISSN 0741-3106 Wydawca: Institute of Electrical and Electronics Engineers A TIPS-TPDO-tetraCN-Based n -Type Organic Field-Effect Transistor with a Cross-linked PMMA Polymer Gate Dielectric Autorzy: Sungyeop Jung, Mohammed Albariqi, Guillaume Gruntz, Thamer Al-Hathal, Alba Peinado, Enric Garcia-Caurel, Yohann Nicolas, Thierry Toupance, Yvan Bonnassieux, Gilles Horowitz Opublikowane w: ACS Applied Materials & Interfaces, Numer 8/23, 2016, Strona(/y) 14701-14708, ISSN 1944-8244 Wydawca: American Chemical Society DOI: 10.1021/acsami.6b00480 Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain Autorzy: Sungsik Lee, Arokia Nathan Opublikowane w: Science, Numer 354/6310, 2016, Strona(/y) 302-304, ISSN 0036-8075 Wydawca: American Association for the Advancement of Science DOI: 10.1126/science.aah5035 A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors Autorzy: Oana Moldovan, Alejandra Castro-Carranza, Antonio Cerdeira, Magali Estrada, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato, Slobodan Miljakovic, Benjamin Iñiguez Opublikowane w: Solid-State Electronics, Numer 126, 2016, Strona(/y) 81-86, ISSN 0038-1101 Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.sse.2016.09.011 Fundamental insights into the threshold characteristics of organic field-effect transistors Autorzy: Sungyeop Jung, Chang-Hyun Kim, Yvan Bonnassieux, Gilles Horowitz Opublikowane w: Journal of Physics D: Applied Physics, Numer 48/3, 2015, Strona(/y) 035106, ISSN 0022-3727 Wydawca: Institute of Physics Publishing DOI: 10.1088/0022-3727/48/3/035106 TFT Compact Modeling Autorzy: Xiang Cheng, Sungsik Lee, Guangyu Yao, Arokia Nathan Opublikowane w: Journal of Display Technology, Numer 12/9, 2016, Strona(/y) 898-906, ISSN 1551-319X Wydawca: Institute of Electrical and Electronics Engineers DOI: 10.1109/JDT.2016.2556980 Device-Circuit Interactions and Impact on TFT Circuit-System Design Autorzy: Xiang Cheng, Sungsik Lee, Reza Chaji, Arokia Nathan Opublikowane w: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016, Strona(/y) 1-10, ISSN 2156-3357 Wydawca: IEEE Circuits and Systems Society DOI: 10.1109/JETCAS.2016.2621348 Universal Compact Model for Organic Solar Cell Autorzy: Jong W. Jin, Sungyeop Jung, Yvan Bonnassieux, Gilles Horowitz, Alexandra Stamateri, Christos Kapnopoulos, Argiris Laskarakis, Stergios Logothetidis Opublikowane w: IEEE Transactions on Electron Devices, Numer 63/10, 2016, Strona(/y) 4053-4059, ISSN 0018-9383 Wydawca: Institute of Electrical and Electronics Engineers DOI: 10.1109/TED.2016.2598793 TFT Small Signal Model and Analysis Autorzy: Xiang Cheng, Sungsik Lee, Arokia Nathan Opublikowane w: IEEE Electron Device Letters, Numer 37/7, 2016, Strona(/y) 890-893, ISSN 0741-3106 Wydawca: Institute of Electrical and Electronics Engineers DOI: 10.1109/LED.2016.2575924 On the series resistance in staggered amorphous thin film transistors Autorzy: Antonio Cerdeira, Magali Estrada, Lluis F. Marsal, Josep Pallares, Benjamín Iñiguez Opublikowane w: Microelectronics Reliability, Numer 63, 2016, Strona(/y) 325-335, ISSN 0026-2714 Wydawca: Elsevier BV DOI: 10.1016/j.microrel.2016.05.005 Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors Autorzy: Sungsik Lee, Arokia Nathan Opublikowane w: Scientific Reports, Numer 6, 2016, Strona(/y) 22567, ISSN 2045-2322 Wydawca: Nature Publishing Group DOI: 10.1038/srep22567 An approach to organic field-effect transistor above-threshold drains current compact modeling that provides monotonic decrease of the output conductance with drain bias increasing Autorzy: V O Turin, B A Rakhmatov, C H Kim, B Iñiguez Opublikowane w: IOP Conference Series: Materials Science and Engineering, Numer 151, 2016, Strona(/y) 012044, ISSN 1757-8981 Wydawca: IOPScience DOI: 10.1088/1757-899X/151/1/012044 Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation Autorzy: Franziska Hain, Michael Graef, Benjamín Iñíguez, Alexander Kloes Opublikowane w: Solid-State Electronics, Numer 133, 2017, Strona(/y) 17-24, ISSN 0038-1101 Wydawca: Pergamon Press Ltd. DOI: 10.1016/j.sse.2017.04.002 Wyszukiwanie danych OpenAIRE... Podczas wyszukiwania danych OpenAIRE wystąpił błąd Brak wyników
