CMOS/magnetoelectronic Integrated Circuits wil Multifunctional Capabilities

Publikacje

PSA-STT-MRAM solution for extended temperature stability

Autorzy: Steven Lequeux; Trevor Almeida; Nuno Cacoilo; Alvaro Palomino; Ioan Lucian Prejbeanu; Ricardo C. Sousa; David Cooper; Bernard Dieny
Opublikowane w: Crossref, Numer 1, 2021, ISSN 2573-7503
Wydawca: IEEE
DOI: 10.1109/imw51353.2021.9439609

Magnetic Random Access Memories (MRAM) beyond Information Storage

Autorzy: R. C. Sousa, A. Chavent, V. Iurchuk, L. Vila, U. Ebels, B. Dieny, G. di Pendina, G. Prenat, J. Langer, J. Wrona, I. L. Prejbeanu
Opublikowane w: 2020 IEEE Symposium on VLSI Technology, 2020, Strona(/y) 1-2, ISBN 978-1-7281-6460-1
Wydawca: IEEE
DOI: 10.1109/vlsitechnology18217.2020.9265053

Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

Autorzy: V. D. Nguyen, P. Sabon, J. Chatterjee, L. Tille, P. Veloso Coelho, S. Auffret, R. Sousa, L. Prejbeanu, E. Gautier, L. Vila, B. Dieny
Opublikowane w: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Strona(/y) 38.5.1-38.5.4, ISBN 978-1-5386-3559-9
Wydawca: IEEE
DOI: 10.1109/IEDM.2017.8268517

Spintronic based RF components

Autorzy: U. Ebels, J. Hem, A. Purbawati, A. Ruiz Calafora, C. Murapaka, L. Vila, K. Jaimes Merazzo, E. Jimenez, M.-C. Cyrille, R. Ferreira, M. Kreissig, R. Ma, F. Ellinger, R. Lebrun, S. Wittrock, V. Cros, P. Bortolotti
Opublikowane w: 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFC), 2017, Strona(/y) 66-67, ISBN 978-1-5386-2916-1
Wydawca: IEEE
DOI: 10.1109/FCS.2017.8088802

Towards high density STT-MRAM at sub-20nm nodes

Autorzy: V. D. Nguyen, N. Perrissin, S. Lequeux, J. Chatterjee, L. Tille, S. Auffret, R. Sousa, E. Gautier, L. Vila, L. Prejbeanu, B. Dieny
Opublikowane w: 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2018, Strona(/y) 1-2, ISBN 978-1-5386-4825-4
Wydawca: IEEE
DOI: 10.1109/VLSI-TSA.2018.8403867

Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

Autorzy: N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, L. Buda-Prejbeanu, S. Auffret, R.C. Sousa, I.L. Prejbeanu, B. Dieny
Opublikowane w: 2018 International Conference on IC Design & Technology (ICICDT), 2018, Strona(/y) 125-128, ISBN 978-1-5386-2550-7
Wydawca: IEEE
DOI: 10.1109/icicdt.2018.8399772

Low-power hybrid STT/CMOS system-on-chip embedding non-volatile magnetic memory blocks

Autorzy: Christophe Layer, Kotb Jabeur, Stephane Gros, Laurent Becker, Pierre Paoli, Fabrice Bernard-Granger, Virgile Javerliac, Bernard Dieny
Opublikowane w: 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), 2015, Strona(/y) 1-4, ISBN 978-1-4799-8893-8
Wydawca: IEEE
DOI: 10.1109/NEWCAS.2015.7181999

Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications

Autorzy: B. Lacoste, M. Marins de Castro, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, B. Rodmacq, B. Dieny
Opublikowane w: 2016 IEEE 8th International Memory Workshop (IMW), 2016, Strona(/y) 1-4, ISBN 978-1-4673-8833-7
Wydawca: IEEE
DOI: 10.1109/IMW.2016.7495262

Hybrid STT/CMOS Design of an Interrupt Based Instant On/Off Mechanism for Low-Power SoC

Autorzy: Christophe Layer, Kotb Jabeur, Laurent Becker, Bernard Dieny, Stephane Gros, Virgile Javerliac, Pierre Paoli, Fabrice Bernard-Granger
Opublikowane w: 2015 IEEE Computer Society Annual Symposium on VLSI, 2015, Strona(/y) 315-320, ISBN 978-1-4799-8719-1
Wydawca: IEEE
DOI: 10.1109/ISVLSI.2015.7

Spin accumulation dynamics in spin valves in the terahertz regime

Autorzy: A. Vedyaev, N. Ryzhanova, N. Strelkov, A. Lobachev, B. Dieny
Opublikowane w: Physical Review B, Numer 101/1, 2020, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.101.014401

Stabilization of the easy-cone magnetic state in free layers of magnetic tunnel junctions

Autorzy: B. M. S. Teixeira, A. A. Timopheev, N. Caçoilo, S. Auffret, R. C. Sousa, B. Dieny, N. A. Sobolev
Opublikowane w: Physical Review B, Numer 100/18, 2019, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.100.184405

Spin-Torque-Triggered Magnetization Reversal in Magnetic Tunnel Junctions with Perpendicular Shape Anisotropy

Autorzy: N. Caçoilo, S. Lequeux, B.M.S. Teixeira, B. Dieny, R.C. Sousa, N.A. Sobolev, O. Fruchart, I.L. Prejbeanu, L.D. Buda-Prejbeanu
Opublikowane w: Physical Review Applied, Numer 16/2, 2021, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.16.024020

Route Towards Efficient Magnetization Reversal Driven by Voltage Control of Magnetic Anisotropy

Autorzy: Roxana-Alina One; Hélène Béa; Sever Mican; Marius Joldos; Pedro Veiga Brandao; Bernard Dieny; Liliana D. Buda-Prejbeanu; Coriolan Tiusan
Opublikowane w: EISSN: 2045-2322, Numer 1, 2021, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.21203/rs.3.rs-182704/v1

Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

Autorzy: M. Mansueto, A. Chavent, S. Auffret, I. Joumard, L. Vila, R. C. Sousa, L. D. Buda-Prejbeanu, I. L. Prejbeanu, B. Dieny
Opublikowane w: Nanoscale, Numer 13/26, 2021, Strona(/y) 11488-11496, ISSN 2040-3364
Wydawca: Royal Society of Chemistry
DOI: 10.1039/d1nr00346a

Spin Torque Efficiency Modulation in a Double-Barrier Magnetic Tunnel Junction with a Read/Write Mode Control Layer

Autorzy: Antoine Chavent; Paulo Coelho; Jyotirmoy Chatterjee; Nikita Strelkov; Stéphane Auffret; Liliana Buda-Prejbeanu; Ricardo Sousa; Laurent Vila; Ioan-Lucian Prejbeanu; Bernard Diény; Claire Baraduc
Opublikowane w: Crossref, Numer 1, 2021, ISSN 2637-6113
Wydawca: ACS
DOI: 10.1021/acsaelm.1c00198

A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

Autorzy: A. Chavent, V. Iurchuk, L. Tillie, Y. Bel, N. Lamard, L. Vila, U. Ebels, R.C. Sousa, B. Dieny, G. di Pendina, G. Prenat, J. Langer, J. Wrona, I.L. Prejbeanu
Opublikowane w: Journal of Magnetism and Magnetic Materials, Numer 505, 2020, Strona(/y) 166647, ISSN 0304-8853
Wydawca: Elsevier BV
DOI: 10.1016/j.jmmm.2020.166647

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

Autorzy: M. Mansueto, A. Chavent, S. Auffret, I. Joumard, J. Nath, I.M. Miron, U. Ebels, R.C. Sousa, L.D. Buda-Prejbeanu, I.L. Prejbeanu, B. Dieny
Opublikowane w: Physical Review Applied, Numer 12/4, 2019, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.12.044029

Giant Perpendicular Magnetic Anisotropy Enhancement in MgO -Based Magnetic Tunnel Junction by Using Co / Fe Composite Layer

Autorzy: Libor Vojáček, Fatima Ibrahim, Ali Hallal, Bernard Dieny, Mairbek Chshiev
Opublikowane w: Physical Review Applied, Numer 15/2, 2021, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.15.024017

An electron holography study of perpendicular magnetic tunnel junctions nanostructured by deposition on pre-patterned conducting pillars

Autorzy: V. Boureau, V. D. Nguyen, A. Masseboeuf, A. Palomino, E. Gautier, J. Chatterjee, S. Lequeux, S. Auffret, L. Vila, R. Sousa, L. Prejbeanu, D. Cooper, B. Dieny
Opublikowane w: Nanoscale, Numer 12/33, 2020, Strona(/y) 17312-17318, ISSN 2040-3364
Wydawca: Royal Society of Chemistry
DOI: 10.1039/d0nr03353g

Perpendicular shape anisotropy spin transfer torque-MRAM: determination of pillar tilt angle from 3D Stoner–Wohlfarth astroid analysis

Autorzy: N Perrissin, N Caçoilo, G Gregoire, S Lequeux, L Tillie, N Strelkov, A Chavent, S Auffret, L D Buda-Prejbeanu, R C Sousa, L Vila, I L Prejbeanu, B Dieny
Opublikowane w: Journal of Physics D: Applied Physics, Numer 52/50, 2019, Strona(/y) 505005, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ab4215

Analog and Digital Phase Modulation and Signal Transmission with Spin-Torque Nano-Oscillators

Autorzy: A. Litvinenko, P. Sethi, C. Murapaka, A. Jenkins, V. Cros, P. Bortolotti, R. Ferreira, B. Dieny, U. Ebels
Opublikowane w: Physical Review Applied, Numer 16/2, 2021, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.16.024048

Thermal robustness of magnetic tunnel junctions with perpendicular shape anisotropy

Autorzy: S. Lequeux, N. Perrissin, G. Grégoire, L. Tillie, A. Chavent, N. Strelkov, L. Vila, L. D. Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, E. Di Russo, E. Gautier, A. P. Conlan, D. Cooper, B. Dieny
Opublikowane w: Nanoscale, Numer 12/11, 2020, Strona(/y) 6378-6384, ISSN 2040-3364
Wydawca: Royal Society of Chemistry
DOI: 10.1039/c9nr10366j

Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer

Autorzy: Jyotirmoy Chatterjee, Ricardo C. Sousa, Nicolas Perrissin, Stéphane Auffret, Clarisse Ducruet, and Bernard Dieny
Opublikowane w: Applied Physics Letters, Numer 110/20, 2017, Strona(/y) 202401, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4983159

Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions

Autorzy: B. M. S. Teixeira, A. A. Timopheev, N. F. F. Caçoilo, S. Auffret, R. C. Sousa, B. Dieny, E. Alves, N. A. Sobolev
Opublikowane w: Applied Physics Letters, Numer 112/20, 2018, Strona(/y) 202403, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5026854

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy

Autorzy: Nicolas Perrissin, Steven Lequeux, Strelkov Nikita, Laurent Vila, Liliana Buda-Prejbeanu, Stephane Auffret, Ricardo Sousa, Ioan Lucian Prejbeanu, Bernard Dieny
Opublikowane w: Nanoscale, 2018, ISSN 2040-3364
Wydawca: Royal Society of Chemistry
DOI: 10.1039/C8NR01365A

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

Autorzy: T Andrianov, A Vedyaev, B.Dieny
Opublikowane w: Journal of Physics D: Applied Physics, Numer 51/20, 2018, Strona(/y) 205003, ISSN 0022-3727
Wydawca: Institute of Physics Publishing

Advanced memory—Materials for a new era of information technology

Autorzy: Cheol Seong Hwang, Bernard Dieny
Opublikowane w: MRS Bulletin, Numer 43/05, 2018, Strona(/y) 330-333, ISSN 0883-7694
Wydawca: Materials Research Society
DOI: 10.1557/mrs.2018.96

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Autorzy: A. Ruiz-Calaforra, A. Purbawati, T. Brächer, J. Hem, C. Murapaka, E. Jiménez, D. Mauri, A. Zeltser, J. A. Katine, M.-C. Cyrille, L. D. Buda-Prejbeanu, U. Ebels
Opublikowane w: Applied Physics Letters, Numer 111/8, 2017, Strona(/y) 082401, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4994892

Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency

Autorzy: A. A. Timopheev, B. M. S. Teixeira, R. C. Sousa, S. Aufret, T. N. Nguyen, L. D. Buda-Prejbeanu, M. Chshiev, N. A. Sobolev, B. Dieny
Opublikowane w: Physical Review B, Numer 96/1, 2017, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.96.014412

Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet

Autorzy: Jyotirmoy Chatterjee, Stephane Auffret, Ricardo Sousa, Paulo Coelho, Ioan-Lucian Prejbeanu, Bernard Dieny
Opublikowane w: Scientific Reports, Numer 8/1, 2018, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-018-29913-6

Impact of Intergrain Spin-Transfer Torques Due to Huge Thermal Gradients in Heat-Assisted Magnetic Recording

Autorzy: Bernard Dieny, Mair Chshiev, Brian Charles, Nikita Strelkov, Alain Truong, Olivier Fruchart, Ali Hallal, Jian Wang, Yukiko K. Takahashi, Tomohito Mizuno, Kazuhiro Hono
Opublikowane w: IEEE Transactions on Magnetics, Numer 54/12, 2018, Strona(/y) 1-11, ISSN 0018-9464
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmag.2018.2863225

Nonlocal Signal and Noise in T -Shaped Lateral Spin-Valve Structures

Autorzy: A. Vedyayev, N. Ryzhanova, N. Strelkov, T. Andrianov, A. Lobachev, B. Dieny
Opublikowane w: Physical Review Applied, Numer 10/6, 2018, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.10.064047

Impact of Joule heating on the stability phase diagrams of perpendicular magnetic tunnel junctions

Autorzy: N. Strelkov, A. Chavent, A. Timopheev, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, B. Dieny
Opublikowane w: Physical Review B, Numer 98/21, 2018, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.98.214410

Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer

Autorzy: Jyotirmoy Chatterjee, Eric Gautier, Marc Veillerot, Ricardo C. Sousa, Stéphane Auffret, Bernard Dieny
Opublikowane w: Applied Physics Letters, Numer 114/9, 2019, Strona(/y) 092407, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5081912

Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars

Autorzy: Daniele Gastaldo, Nikita Strelkov, Liliana D. Buda-Prejbeanu, Bernard Dieny, Olivier Boulle, Paolo Allia, Paola Tiberto
Opublikowane w: Journal of Applied Physics, Numer 126/10, 2019, Strona(/y) 103905, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.5109484

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

Autorzy: B. Dieny, M. Chshiev
Opublikowane w: Reviews of Modern Physics, Numer 89/2, 2017, ISSN 0034-6861
Wydawca: American Physical Society
DOI: 10.1103/RevModPhys.89.025008

Establishing characteristic behavior of voltage control of magnetic anisotropy by ionic migration

Autorzy: F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev
Opublikowane w: Physical Review B, Numer 98/21, 2018, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/PhysRevB.98.214441

Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry

Autorzy: N. Strelkov, A. Timopheev, R. C. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny
Opublikowane w: Physical Review B, Numer 95/18, 2017, Strona(/y) 184409, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.95.184409

Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

Autorzy: A. Vedyayev, N. Ryzhanova, N. Strelkov, M. Titova, M. Chshiev, B. Rodmacq, S. Auffret, L. Cuchet, L. Nistor, B. Dieny
Opublikowane w: Physical Review B, Numer 95/6, 2017, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.95.064420

Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

Autorzy: Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Ioan L. Prejbeanu, Bernard Dieny
Opublikowane w: Scientific Reports, Numer 6/1, 2016, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/srep21246

Magnetoresistive Random Access Memory

Autorzy: Dmytro Apalkov, Bernard Dieny, J. M. Slaughter
Opublikowane w: Proceedings of the IEEE, Numer 104/10, 2016, Strona(/y) 1796-1830, ISSN 0018-9219
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JPROC.2016.2590142

Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access Memories

Autorzy: Christophe Layer, Virgile Javerliac, Fabrice Bernard-Granger, Loic Decloedt, Laurent Becker, Kotb Jabeur, Sylvain Claireux, Bernard Dieny, Guillaume Prenat, Gregory Di Pendina, Stephane Gros, Pierre Paoli
Opublikowane w: ACM Journal on Emerging Technologies in Computing Systems, Numer 12/4, 2016, Strona(/y) 1-24, ISSN 1550-4832
Wydawca: Association for Computing Machinary, Inc.
DOI: 10.1145/2876507

Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations

Autorzy: C.?I.?L. de Araujo, S.?G. Alves, L.?D. Buda-Prejbeanu, B. Dieny
Opublikowane w: Physical Review Applied, Numer 6/2, 2016, Strona(/y) 024015, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/PhysRevApplied.6.024015

Spintronics [Scanning the Issue]

Autorzy: Hideo Ohno, Mark D. Stiles, Bernard Dieny
Opublikowane w: Proceedings of the IEEE, Numer 104/10, 2016, Strona(/y) 1782-1786, ISSN 0018-9219
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/JPROC.2016.2601163

Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces

Autorzy: F. Ibrahim, H. X. Yang, A. Hallal, B. Dieny, M. Chshiev
Opublikowane w: Physical Review B, Numer 93/1, 2016, Strona(/y) 014429, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.93.014429

Temperature Variation of Magnetic Anisotropy in Pt / Co / AlO x Trilayers

Autorzy: H. Garad, F. Fettar, F. Gay, Y. Joly, S. Auffret, B. Rodmacq, B. Dieny, L. Ortega
Opublikowane w: Physical Review Applied, Numer 7/3, 2017, Strona(/y) 034023, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/PhysRevApplied.7.034023

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

Autorzy: A. A. Timopheev, R. Sousa, M. Chshiev, H. T. Nguyen, B. Dieny
Opublikowane w: Scientific Reports, Numer 6/1, 2016, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/srep26877

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

Autorzy: M. Chshiev, A. Manchon, A. Kalitsov, N. Ryzhanova, A. Vedyayev, N. Strelkov, W. H. Butler, B. Dieny
Opublikowane w: Physical Review B, Numer 92/10, 2015, ISSN 1098-0121
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.92.104422

Ultrafast Sweep-Tuned Spectrum Analyzer with Temporal Resolution Based on a Spin-Torque Nano-Oscillator

Autorzy: Artem Litvinenko, Vadym Iurchuk, Pankaj Sethi, Steven Louis, Vasyl Tyberkevych, Jia Li, Alex Jenkins, Ricardo Ferreira, Bernard Dieny, Andrei Slavin, Ursula Ebels
Opublikowane w: Nano Letters, Numer 20/8, 2020, Strona(/y) 6104-6111, ISSN 1530-6984
Wydawca: American Chemical Society
DOI: 10.1021/acs.nanolett.0c02195

Review on spintronics: Principles and device applications

Autorzy: Atsufumi Hirohata, Keisuke Yamada, Yoshinobu Nakatani, Ioan-Lucian Prejbeanu, Bernard Diény, Philipp Pirro, Burkard Hillebrands
Opublikowane w: Journal of Magnetism and Magnetic Materials, Numer 509, 2020, Strona(/y) 166711, ISSN 0304-8853
Wydawca: Elsevier BV
DOI: 10.1016/j.jmmm.2020.166711

Reduced Thermal Variation of Perpendicular Magnetic Anisotropy in Magnetically Stiffened Dual-W Composite Storage Layer for Spin-Transfer-Torque Magnetic Random-Access Memory

Autorzy: Jyotirmoy Chatterjee, Antoine Chavent, Farid Fettar, Stephane Auffret, Clarisse Ducruet, Isabelle Joumard, Laurent Vila, Ricardo C. Sousa, Lucian Prejbeanu, Bernard Dieny
Opublikowane w: Physical Review Applied, Numer 12/4, 2019, ISSN 2331-7019
Wydawca: APS
DOI: 10.1103/physrevapplied.12.044043

Magnetic Random Access Memory

Autorzy: S.Bandiera and B.Dieny
Opublikowane w: 2017, ISBN 978-3527-339853
Wydawca: Wiley Publishers

Miniaturisation extrême de mémoires STT-MRAM: couche de stockage à anisotropie de forme perpendiculaire

Autorzy: Nicolas Perrissin Fabert
Opublikowane w: 2018
Wydawca: SPINTEC

Introduction to Magnetic Random Access Memories

Autorzy: B.Dieny, R.Goldfarb, K.J.Lee
Opublikowane w: 2017
Wydawca: John Wiley Publising