QUantum INTErface between Superconducting circuits and Spin ENSemble

Projektinformationen

QUINTESSENS

ID Finanzhilfevereinbarung: 705713

DOI 10.3030/705713

Das Projekt endete am 16 Juni 2018

EK-Unterschriftsdatum 29 Februar 2016

Startdatum 1 März 2016

Enddatum 28 Februar 2018

Finanziert unter

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Gesamtkosten € 183 454,80

EU-Beitrag € 183 454,80

Koordiniert durch

UNIVERSITY COLLEGE LONDON
United Kingdom

Ziel

The ever shrinking size of field effect transistors for digital electronics has now reached a boundary where fluctuations in the position of a single dopant can have a significant influence on the performance of the transistor and quantum effects cannot be neglected any more. These two effects therefore represent a size limit, preventing the microelectronics industry from further downscaling and performance increase of MOSFET transistors. This calls for a breakthrough. Rather than being a drawback one can take advantage of quantum and dopant effects to build a quantum analogue of the classical electronics.

To build this Quantum Electronics one would need basic quantum elements: good quantum memory, quantum bus, quantum processor, and of course and efficient interface between these elements. Superconducting circuits have already been shown to be efficient as quantum bus or quantum processor, but can only hold quantum information for tens of microseconds.

In this project I propose to build a long lasting quantum memory and interface it, quantum coherently and efficiently, to a superconducting quantum bus. I will use an ensemble of spins of bismuth dopants implanted in silicon as a quantum memory. Bismuth spins have been recently proven to be able to hold quantum information over several seconds when immersed in a small magnetic field, bringing them to a so-called clock transition. I will interface this good quantum memory with superconducting circuits, bringing together a good quantum memory with a quantum bus and processor. Building this unit in silicon, I will benefit from tremendous material development made by the microelectronic industry over the past 50 years.

Wissenschaftliches Gebiet

• natural sciences › physical sciences › quantum physics
• natural sciences › chemical sciences › inorganic chemistry › post-transition metals
• natural sciences › chemical sciences › inorganic chemistry › metalloids
• natural sciences › physical sciences › electromagnetism and electronics › superconductivity
• natural sciences › physical sciences › theoretical physics › particle physics › photons

Schlüsselbegriffe

• Quantum electronics
• quantum memory
• superconducting circuits
• NbN
• Bi spin ensemble
• Clock transition

Programm/Programme

• H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme
• H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility

Thema/Themen

• MSCA-IF-2015-EF - Marie Skłodowska-Curie Individual Fellowships (IF-EF)

Aufforderung zur Vorschlagseinreichung

H2020-MSCA-IF-2015

Finanzierungsplan

MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)

Koordinator

UNIVERSITY COLLEGE LONDON

• Netto-EU-Beitrag: € 183 454,80
• Adresse: GOWER STREET ; WC1E 6BT London ; Vereinigtes Königreich
• Region: London › Inner London — West › Camden and City of London
• Aktivitätstyp: Higher or Secondary Education Establishments
• Gesamtkosten: € 183 454,80