Cel
Semiconductor sensors for boron neutron capture therapy.
The Department of Radiation Physics at the Institute for Nuclear Research has good experience in semiconductor-based detectors for neutron measurements.
The principle is based on the creation of radiaton defects in semiconductors under the influence of fast neutrons, which change the electrical properties of the semiconductor. As the threshold energy for creation of radiation defects in silicon is 13 eV, one can produce semiconductor dosimeters for neutron dose measurements with application in cancer therapy.
In this project, it is proposed to carry out the following research: 1. The construction and testing of various types of integral semiconductor dosimeters for regitration of neutron doses with the energy 1 eV to 8 keV.
2. The construction and testing of detectors with different converters for defining the neutron flux density as a function of neutron energy.
3. The test of semiconductor sensors for medical purposes, especially for on-line monitoring.
Zaproszenie do składania wniosków
Data not availableSystem finansowania
CSC - Cost-sharing contractsKoordynator
28334 Bremen
Niemcy