Objectif
The aim of the project is to improve understanding of the different noise sources in compound semiconductors and high electron mobility transistor (HEMT) structures most important for low-noise high-speed electronics. Electron drift velocity, AC response, diffusivity and spectral density of fluctuations will be studied, independent of the band structure, the doping level, interelectrodal distance and ambient temperature. The main emphasis will be put on the physical, geometrical, and process-dependent parameters which influence the noise behaviour of compound semiconductors and heterostructures both at low frequencies and microwave frequencies in particular when the electric field strength increases.
The noise contribution in HEMT-based structures due to purely physical processes in the channel will be separated from that of the design. Contributions originating from device matching and the thermal regime will be estimated. In addition, noise in tunnelling junctions will be investigated. The analysis of excess noise in heterostructure barriers will give new insight into noise phenomena of future resonant-tunnelling devices.
INFORMATION DISSEMINATION ACTIVITIES AND EXPLOITATION
Papers at various international conferences shall be presented, especially in Europe, and there will be an annual workshop open to a limited number of external participants.
Thème(s)
Data not availableAppel à propositions
Data not availableRégime de financement
CSC - Cost-sharing contractsCoordinateur
64289 Darmstadt
Allemagne