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High-temperature devices fabricated on silicon carbide and solid solution of silicon carbide - aluminium nitride

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The aim of this project is to develop and demonstrate the feasibility of novel semiconductor devices for very high temperature operation. Such components are highly desirable for power, space and automotive applications.

Improved characteristics of the fabricated devices will be based on the use of heterostructures operating at temperatures higher than 500 degrees C. Epitaxial growth of different polytypes of silicon carbide (SiC) on silicon carbide material as well as on SiC-aluminium nitride (AlN) solid solutions will be achieved at the Ioffe Institute. The fundamental properties of heterojunctions and different layers will be thoroughly investigated and modelled in the associated west European laboratories. Components such as diodes or junction field-effect transistors (JFETs) will be fabricated, the SiC-AlN layers being used as semi-insulating substrate.

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Institut National Polytechnique de Grenoble
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Adresse
Avenue des Martyrs 23
38016 Grenoble
Frankreich

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Letzte Aktualisierung: 19 September 1996

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Permalink: https://cordis.europa.eu/project/id/INTAS-93-2651/de

European Union, 2024