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Luminescent silicon: mechanism and materials aspects of electrical excitation

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Silicon, when finely divided into nanocrystallites in a porous layer produced by electrochemical etching in vapor-deposited thin films or produced in a gas-phase relation, shows a remarkable luminescence in the visible spectrum. Such luminescent Si, in order to be of some use in optoelectronic applications, must be contacted and integrated into an electrical circuit. One must search for ways to electrically control, to modulate or switch the ontical emissions.

The three laboratories involved in this project are each working on various electroptical phenomena in nanocrystalline Si with a similar aim. It is intended to pool resources and ideas in order to make progress in this rapidly developing field, each group in a particular area of materials expertise and analytical experimental facilities.

Work on the electroluminescence phenomena, on the electrical quenching effect and on voltage-tuneable emission wavelengths, will be specifically carried out. Experiments to investigate electrical control of the polarization, of non-linear characteristics and the absorption constants will also be carried out. The results are to be shared and communicated between the research groups.

Central to this effort is the preparation of the Si materials and the contacting electrode. Various solid state contacts that are superficially attached to the luminescent layers will be explored, as well as penetrating liquid electrolytes and conducting polymers.

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Technische Universität München
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James-Franck Straße
85747 Garching
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Letzte Aktualisierung: 19 September 1996

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Permalink: https://cordis.europa.eu/project/id/INTAS-93-3325/de

European Union, 2024