Cel The WELCOME project develops advanced, fully packaged and system tested quantum well (QW) based discrete and monolithically integrated components of enhanced performance needed for optical IBC implementation. The focus is on 1.55 um transmitters and new 0.98 um pump lasers, space switches and picosecond optical pulse sources for high speed systems operating at bit rates greater than or equal to 10 Gbit/s.The overall objective of the project was to develop the following highly advanced quantum well components for high speed transmission systems (greater than or equal to 10 gigabits per second):transmitter modules based on quantum well (QW) lasers;optical modulators for external digital modulation;a monolithically integrated QW single mode laser modulator for intensity modulation (IM) transmission systems;second generation system qualified 980 nm pump laser modules for erbium doped fibre amplifiers (EDFA).The following progress has been achieved:a QW distributed feedback (DFB) laser has been realised based on 2 inch technologies (the laser module worked well in a system testbed at 10 gigabits per second nonreturn to zero (NRZ));QW DBF lasers have been designed for 10 gigabits per second frequency shift keying (FSK) modulation;VUG SIBH lasers have been realised with strained QWs;QW electroabsorption modulators (EAM) have been fabricated with bandwidths in excess of 20 GHz in combination with a low drive voltage of lV;basic technologies for the longitudinal integration of a QW DBF laser modulator have been developed using low pressure (LP) metal organic vapour phase epitaxy (MOVPE);a package for the laser modulator chip and a 3-terminal submount with microstrip and coplanar GSG transmission line were developed for gigabits per second operation;980 nm QW pump lasers for EDFAs were realised in the material systems gallium indium arsenide/gallium arsenide/aluminium gallium arsenide and gallium indium arsenide/gallium(indium)arsenic(phosphorus)gallium indium phosphide by molecular beam epitaxy (MBE) and gas source molecular beam epitaxy (GSMBE) respectively;QW EAMs have been tested in an EDFA based transmission system using standard and dispersion shifted fibres.Technical Approach -Transmitter modules based on QW DFB laser chips with extremely low parasitics for intensity modulation (IM) and frequency shift keying (FSK) systems operating at 10 Gbit/s. Strained-layer QW structures and injection locking techniques for chirp reduction are used.- Discrete and potentially integrable QW modulators with reduced chirp and high modulation capability for IM systems operating at 10-20 Gbit/s based on electric field induced changes in the dielectric function by the Quantum Confined Stark/Wannier Stark Effect (QCSE/WSE) and on the advanced BRAQWET concept.- Transmitter modules based on highly advanced monolithically integrated QW DFB laser/electroabsorption modulator (EAM) chips for greater than or equal to 10 Gbit/s IM systems.- Monolithically integrated pico-second optical pulse sources for applications in 20 Gbit/s systems based on OTDM/non-linear (soliton) transmission.- 2nd generation 0.98 um pump laser modules for Erbium doped fibre amplifiers based on specific QW structures considering A1-based and A1-free material systems.- QW components test in a system to qualify, feed in component data to system design and propose CPRs/CFSs. Key Issues - Development of technology platform for quantum well based components and photonic ICs.- Realisation of 1.55 um transmitters and second generation 0.98 um pump lasers for high speed transmission / distribution systems operating at bit rates greater than or equal to 10 Gbit/s.- Component tests and contribution to CPRs and CFSs. Expected Impact It is intended to transfer the QW technology from the project to the production units of the industrial partners for further development leading to low cost production. Dziedzina nauki natural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical sciencesopticslaser physics Program(-y) FP3-RACE 2 - Specific research and technological development programme (EEC) in the field of communication technologies, 1990-1994 Temat(-y) Data not available Zaproszenie do składania wniosków Data not available System finansowania Data not available Koordynator Alcatel SEL AG Wkład UE Brak danych Adres Lorenzstraße 10 70435 Stuttgart Niemcy Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (9) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko BNR Europe Ltd Zjednoczone Królestwo Wkład UE Brak danych Adres London Road CM17 9NA Harlow Zobacz na mapie Koszt całkowity Brak danych Centre National d'Études des Télécommunications (CNET) Francja Wkład UE Brak danych Adres 196 avenue Henri Ravera 92220 Bagneux Zobacz na mapie Koszt całkowity Brak danych Deutsche Bundespost Telekom (DBP) Niemcy Wkład UE Brak danych Adres 6100 DARMSTADT Zobacz na mapie Koszt całkowity Brak danych ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Szwajcaria Wkład UE Brak danych Adres INSTITUTE OF MICRO- AND OPTOELECTRONICS, PH-B ECUBLENS 1015 LAUSANNE Zobacz na mapie Koszt całkowity Brak danych PHILIPPS UNIVERSITY MARBURG Niemcy Wkład UE Brak danych Adres Renthof 6 35032 MARBURG Zobacz na mapie Koszt całkowity Brak danych TAMPERE UNIVERSITY OF TECHNOLOGY Finlandia Wkład UE Brak danych Adres 33101 TAMPERE Zobacz na mapie Koszt całkowity Brak danych THOMSON CSF LCR Francja Wkład UE Brak danych Adres DOMAINE DE CORBEVILLE 91404 ORSAY Zobacz na mapie Koszt całkowity Brak danych UNIVERSITAET STUTTGART Niemcy Wkład UE Brak danych Adres Pfaffenwaldring 57 70511 STUTTGART Zobacz na mapie Koszt całkowity Brak danych University of Bath Zjednoczone Królestwo Wkład UE Brak danych Adres Claverton Down BA2 7AY Bath Zobacz na mapie Koszt całkowity Brak danych
