Research in Nanoelectronics: High-k Materials and High-Mobility-Channel CMOS devices

Projektinformationen

STANFORDUAB

ID Finanzhilfevereinbarung: 274213

Projekt abgeschlossen

Startdatum

Enddatum

Finanziert unter

• Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)

Gesamtkosten € 149 553,20

EU-Beitrag € 149 553,20

Koordiniert durch

UNIVERSITAT AUTONOMA DE BARCELONA
Spain

Ziel

For several decades, silicon semiconductor devices have been scaled down to achieve higher device density and performance. As a result, alternative gate oxides with high dielectric constant (high-k), which can prevent power dissipation resulting from direct quantum mechanical tunneling across the dielectric layer, will replace silicon dioxide which has been used as a gate dielectric in metal-oxide-semiconductor field effect transistors. Deposited hafnium oxide-based insulators are currently the most promising high-k materials for MOS device applications. However, it has been consistently observed that high-k based MOSFETs have problems such as reduced mobility of electronic carriers in the transistor channel, difficulty in setting the threshold voltage (Vth) for CMOS devices, Vth instability, and other device reliability problems. Further improvements require a fundamental understanding of these phenomena.

The second aim of this work is the study of Materials for High-Mobility-Channel MOS. Due to their superior properties such as high electron and hole mobility, Ge and III-V materials have been drawing much attention as a high-mobility-channel layer in the future MOS technology. However, there are some major issues that need to be solved to advance the development of high-mobility-channel MOS such as growth of good quality high k dielectric layer with low interface states

Wissenschaftliches Gebiet

• natural sciences › chemical sciences › inorganic chemistry › transition metals
• natural sciences › physical sciences › electromagnetism and electronics › semiconductivity
• natural sciences › chemical sciences › inorganic chemistry › metalloids
• engineering and technology › nanotechnology › nanoelectronics

Programm/Programme

• FP7-PEOPLE - Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)

Thema/Themen

• FP7-PEOPLE-2010-IOF - Marie Curie Action: "International Outgoing Fellowships for Career Development"

Aufforderung zur Vorschlagseinreichung

FP7-PEOPLE-2010-IOF
Andere Projekte für diesen Aufruf anzeigen

Finanzierungsplan

MC-IOF - International Outgoing Fellowships (IOF)

Koordinator

UNIVERSITAT AUTONOMA DE BARCELONA

Kontakt Verwaltung

Queralt Gonzalez Matos (Ms.)

• EU-Beitrag: € 149 553,20
• Adresse: EDIF A CAMPUS DE LA UAB BELLATERRA CERDANYOLA V ; 08193 Cerdanyola Del Valles ; Spanien
• Region: Este › Cataluña › Barcelona
• Aktivitätstyp: Higher or Secondary Education Establishments
• Gesamtkosten: Keine Daten