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Content archived on 2024-05-29

Planar ultraviolet radiation detectors based on GaN grown on silicon substrate with novel double oxide buffer layer

Objective

This proposal between the researcher dr Adam Szyszka, the Polish fellow, and dr Thomas Schroeder, the scientist in charge of the German host IHP institute in Frankfurt (Oder) concern on investigation and fabrication of gallium nitride planar UV radiation detectors grown on silicon substrate with use of novel double oxide buffer layer.
Gallium nitride and its ternary alloys with aluminium and indium have been recognized as a very important technological material system for fabricating optoelectronic, high frequency and high power devices. Because of the lack of large size GaN substrate different materials are used including silicon which advantages are low cost and large wafer size which allow mass production of devices. Many technological and research problems have to be solved to successful integration of gallium nitride on silicon. In IHP novel approach of application double oxide layer is developing.
Objectives of the project include: obtaining the quality of GaN layer on Si substrate with application of oxide layers which allow for optoelectronic device fabrication, investigation of the influence of layer growth parameters properties of the layer, design and fabrication of the prototypes of the detectors, measurements of the device parameters dependence on layer parameters and epitaxial process conditions.
Training objectives concern on enhancing technical competencies, command of foreign language improving and acquiring of complementary competencies (project management, multicultural communication, industry cooperation)
Coupling competencies of the candidate (device processing, electrical characterisation, physics of semiconductor) with attributes of host institute in its fields of expertise (advanced materials characterization methods, technology of Si integration, international cooperation) the effects of enhancing academic and complementary qualification of the candidate and increase of European Union research and innovation potential will be obtained.

Fields of science (EuroSciVoc)

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Topic(s)

Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.

Call for proposal

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FP7-PEOPLE-2011-IEF
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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

MC-IEF - Intra-European Fellowships (IEF)

Coordinator

IHP GMBH - LEIBNIZ INSTITUTE FOR HIGH PERFORMANCE MICROELECTRONICS
EU contribution
€ 104 619,00
Address
IM TECHNOLOGIEPARK 25
15236 Frankfurt Oder
Germany

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Region
Brandenburg Brandenburg Frankfurt (Oder)
Activity type
Research Organisations
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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