Objective This proposal between the researcher dr Adam Szyszka, the Polish fellow, and dr Thomas Schroeder, the scientist in charge of the German host IHP institute in Frankfurt (Oder) concern on investigation and fabrication of gallium nitride planar UV radiation detectors grown on silicon substrate with use of novel double oxide buffer layer.Gallium nitride and its ternary alloys with aluminium and indium have been recognized as a very important technological material system for fabricating optoelectronic, high frequency and high power devices. Because of the lack of large size GaN substrate different materials are used including silicon which advantages are low cost and large wafer size which allow mass production of devices. Many technological and research problems have to be solved to successful integration of gallium nitride on silicon. In IHP novel approach of application double oxide layer is developing.Objectives of the project include: obtaining the quality of GaN layer on Si substrate with application of oxide layers which allow for optoelectronic device fabrication, investigation of the influence of layer growth parameters properties of the layer, design and fabrication of the prototypes of the detectors, measurements of the device parameters dependence on layer parameters and epitaxial process conditions.Training objectives concern on enhancing technical competencies, command of foreign language improving and acquiring of complementary competencies (project management, multicultural communication, industry cooperation)Coupling competencies of the candidate (device processing, electrical characterisation, physics of semiconductor) with attributes of host institute in its fields of expertise (advanced materials characterization methods, technology of Si integration, international cooperation) the effects of enhancing academic and complementary qualification of the candidate and increase of European Union research and innovation potential will be obtained. Fields of science humanitieslanguages and literaturegeneral language studiesnatural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsnatural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP7-PEOPLE - Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) Topic(s) FP7-PEOPLE-2011-IEF - Marie-Curie Action: "Intra-European fellowships for career development" Call for proposal FP7-PEOPLE-2011-IEF See other projects for this call Funding Scheme MC-IEF - Intra-European Fellowships (IEF) Coordinator IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS Address Im technologiepark 25 15236 Frankfurt oder Germany See on map Region Brandenburg Brandenburg Oder-Spree Activity type Other Administrative Contact Uwe George (Mr.) Links Contact the organisation Opens in new window EU contribution No data
