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Optimal SIC substR ates for Integrated Microwave and Power CircuitS

Objective

OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in particular in SiC power electronics and in microwave device using GaN high electron mobility transistors (HEMT) grown on SiC semi-insulating substrates. OSIRIS project will allow reinforcing GaN technology penetration into the market by cost effectiveness of the SiC substrates and circuit performances improvement thanks to better heat spreading close to the dissipative area.
For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (+30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries). Reduced layer thickness is necessary as only the top 50 to 100µm SiC wafer is really useful as the substrate itself is currently thinned to realise microstrip waveguided microwave circuits.
For power electronics, this isotopic innovation will be essentially focused on thermal improvement, i.e. better electron mobility at a given power dissipation as mobility and drift mobility decrease with temperature and also better carrier transport thanks to lower scattering rates. Schottky and p-i-n diodes will be tested using this material, which however will have to be doped while microwave devices need semi-insulating materials.
The improved thermal SiC properties will be obtained by using single isotopic atoms for silicon and carbon, namely 28Si and 12C. The SiC wafer size will be targeted to 100mm (4-inches) which is today widely used on industry.

Fields of science (EuroSciVoc)

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Programme(s)

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Topic(s)

Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.

Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

ECSEL-RIA - ECSEL Research and Innovation Action

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) ECSEL-2014-1

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Coordinator

III-V LAB
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 637 884,00
Address
1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE
91767 Palaiseau Cedex
France

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Region
Ile-de-France Ile-de-France Essonne
Activity type
Other
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 348 565,00

Participants (9)

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