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Optimal SIC substR ates for Integrated Microwave and Power CircuitS

Objective

OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in particular in SiC power electronics and in microwave device using GaN high electron mobility transistors (HEMT) grown on SiC semi-insulating substrates. OSIRIS project will allow reinforcing GaN technology penetration into the market by cost effectiveness of the SiC substrates and circuit performances improvement thanks to better heat spreading close to the dissipative area.
For microwave GaN/SiC HEMT this isotopic approach could create a complete shift in the currently used substrate / GaN epi-wafer technology; it intends to grow high thermal conductivity (+30%) semi-insulating SiC on top of low cost semiconducting SiC substrates (widely used by the power electronics and LED industries). Reduced layer thickness is necessary as only the top 50 to 100µm SiC wafer is really useful as the substrate itself is currently thinned to realise microstrip waveguided microwave circuits.
For power electronics, this isotopic innovation will be essentially focused on thermal improvement, i.e. better electron mobility at a given power dissipation as mobility and drift mobility decrease with temperature and also better carrier transport thanks to lower scattering rates. Schottky and p-i-n diodes will be tested using this material, which however will have to be doped while microwave devices need semi-insulating materials.
The improved thermal SiC properties will be obtained by using single isotopic atoms for silicon and carbon, namely 28Si and 12C. The SiC wafer size will be targeted to 100mm (4-inches) which is today widely used on industry.

Field of science

  • /social sciences/economics and business/business and management/commerce
  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /social sciences/social and economic geography/transport

Call for proposal

ECSEL-2014-1
See other projects for this call

Funding Scheme

ECSEL-RIA - ECSEL Research and Innovation Action

Coordinator

III-V LAB
Address
1 Avenue Augustin Fresnel Campus Polytechnique
91767 Palaiseau Cedex
France
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
EU contribution
€ 637 884

Participants (8)

INTRASPEC TECHNOLOGIES
France
EU contribution
€ 73 042
Address
3 Avenue Didier Daurat
31400 Toulouse
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
UNITED MONOLITHIC SEMICONDUCTORS SAS
France
EU contribution
€ 46 591
Address
Av Du Quebec 10 Batiment Charmille Parc Silic De Villebon Courtaboeuf
91140 Villebon Sur Yvette
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
EU contribution
€ 164 396
Address
Rue Michel Ange 3
75794 Paris
Activity type
Research Organisations
ISOSILICON AS
Norway
EU contribution
€ 153 500
Address
Rognelia 30
4622 Kristiansand S
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE
Slovakia
EU contribution
€ 110 517
Address
Vazovova 5
81243 Bratislava
Activity type
Higher or Secondary Education Establishments
LINKOPINGS UNIVERSITET
Sweden
EU contribution
€ 316 161
Address
Campus Valla
581 83 Linkoping
Activity type
Higher or Secondary Education Establishments
STMICROELECTRONICS SILICON CARBIDE AB
Sweden
EU contribution
€ 169 919
Address
Po Box 734
601 16 Norkoping
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
ASCATRON AB
Sweden
EU contribution
€ 147 202
Address
Isafjordsgatan 22 Electrum 207
164 40 Kista
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)