Objetivo The aim of this project is the investigation and development of highly effective light emitting media based on Si:RE with the purpose to realize waveguide and microcavity structures for amplification of 1.54 mm emission. The efforts of the participating scientific teams will be directed towards the investigations of mechanisms governing the luminescence of RE elements in silicon and silicon heterogeneous media. In the framework of this project it will be developed new technological approaches, produced and analyzed novel materials and light-emitting structures for Si based optoelectronics, namely: Er-doped nanocrystalline Si structures, SiOx:Er precipitate-containing structures, nanosized multilayer Si:Er/Si and SiGe:Er/Si structures, Er-doped porous anodic alumina and thin xerogel films produced by the sol-gel deposition technique. Advantages of this heterogeneous media combining Er-doped Si nanocrystals in silicon dioxide or amorphous Si as well as Er doped SiOx precipitates in silicon matrixes will be used to obtain materials with the space separated Er excitation and emission regions, what is proposed to give strong enhancement of excitation efficiency of RE ions suppressing at the same time PL temperature quenching. The origin of optically and electrically active centers and the intermediate states, related with rare-earth ions, and their responsibility for temperature quenching of Er-related luminescence will be studied, as well as the center formation processes. Experimental and theoretical considerations of the gain in RE doped heterogeneous media will be given and device structures will be developed. Successful fulfillment of the project goals will give a good chance to fabricate an efficient optical amplifier for 1.54 mm wavelength region and possible a laser structure. Programa(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Tema(s) OPEN - OPEN Call Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador UNIVERSITY OF AMSTERDAM Aportación de la UE Sin datos Dirección VALCKENIERSTRAAT, 65 AMSTERDAM Países Bajos Ver en el mapa Coste total Sin datos Participantes (7) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo Belarusian State University of Informatics and Radioelectronics Bielorrusia Aportación de la UE Sin datos Dirección P. Browka 6 220013 Minsk Ver en el mapa Coste total Sin datos Max-Planck-Institut fuer Mikrostrukturphysik Alemania Aportación de la UE Sin datos Dirección Weinberg 2 06120 Halle Ver en el mapa Coste total Sin datos Moscow State University Rusia Aportación de la UE Sin datos Dirección Leninskie Gory 1 119992 Moscow Ver en el mapa Coste total Sin datos Polish Academy of Sciences Institute of Physics Polonia Aportación de la UE Sin datos Dirección Al. Lotnikw 32 02-668 Warsaw Ver en el mapa Coste total Sin datos Russian Academy of Sciences A.F. Ioffe Physico-Technical Institute Rusia Aportación de la UE Sin datos Dirección Polytekhnicheskaya 26 194021 St. Petersburg Ver en el mapa Coste total Sin datos Russian Academy of Sciences Institute for Physics of Microstructures Rusia Aportación de la UE Sin datos Dirección Ulyanova str. 46 603950 Nizhny Novgorod Ver en el mapa Coste total Sin datos Universidade do Minho Portugal Aportación de la UE Sin datos Dirección Campus de Gualtar 1 4710-057 Braga Ver en el mapa Coste total Sin datos
