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FP7 www.steeper-project.eu

STEEPER

Project ID: 257267
Funded under

Steep subthreshold slope switches\nfor energy efficient electronics

From 2010-06-01 to 2013-11-30, closed project | STEEPER Website

Project details

Total cost:

EUR 6 111 900

EU contribution:

EUR 4 099 999

Coordinated in:

Switzerland

Call for proposal:

FP7-ICT-2009-5See other projects for this call

Funding scheme:

CP - Collaborative project (generic)

Description

European Union Research Initiative Aims to Increase 
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V, and their power consumption by one order of magnitude.STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS. These are (i) Ultra-Thin-Body Silicon-On-Insulator technology for planar, tri-gate and nanowire tunnel FETs featuring ultra-low standby power and smartly exploiting additive boosters: high-k dielectrics, SiGe source, strain, and improved electrostatic design, and (ii) a III-V nanowire platform on silicon, as unique material to control staggered or broken bandgap boosters and devise a high performance (high-Ion, steep slope) implementation of tunnel FETs. Platform (i) will enable a hybrid platform combining high performance (HP) CMOS and low standby power (LSTP), low voltage tunnel FETs, supporting energy efficient hybrid CMOS/Tunnel-FET digital and analog/RF circuit design. In line with ITRS, STEEPER will evaluate in platform (ii) the physical and practical limits of boosting the performance of tunnel FETs with III-V nanowires on silicon, and resulting advantages for HP digital circuits.The development of the two technology platforms are interactive and collaborative in terms of performance boosters, and will benefit from simulation and modelling support by the academic partners, and from investigation of the potentially critical variability and sensitivity of tunnel FETs. Industrial benchmarking is proposed at device and circuit levels by the key involved industries, and the figures of merit of hybrid CMOS/tunnel FET digital and analog circuit design will be investigated.The project targets energy efficient nanoelectronic technology for high volume markets covering digital, analog/RF and mixed mode applications.

Objective

STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V, and their power consumption by one order of magnitude.STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS. These are (i) Ultra-Thin-Body Silicon-On-Insulator technology for planar, tri-gate and nanowire tunnel FETs featuring ultra-low standby power and smartly exploiting additive boosters: high-k dielectrics, SiGe source, strain, and improved electrostatic design, and (ii) a III-V nanowire platform on silicon, as unique material to control staggered or broken bandgap boosters and devise a high performance (high-Ion, steep slope) implementation of tunnel FETs. Platform (i) will enable a hybrid platform combining high performance (HP) CMOS and low standby power (LSTP), low voltage tunnel FETs, supporting energy efficient hybrid CMOS/Tunnel-FET digital and analog/RF circuit design. In line with ITRS, STEEPER will evaluate in platform (ii) the physical and practical limits of boosting the performance of tunnel FETs with III-V nanowires on silicon, and resulting advantages for HP digital circuits.The development of the two technology platforms are interactive and collaborative in terms of performance boosters, and will benefit from simulation and modelling support by the academic partners, and from investigation of the potentially critical variability and sensitivity of tunnel FETs. Industrial benchmarking is proposed at device and circuit levels by the key involved industries, and the figures of merit of hybrid CMOS/tunnel FET digital and analog circuit design will be investigated.The project targets energy efficient nanoelectronic technology for high volume markets covering digital, analog/RF and mixed mode applications.

Coordinator contact

Mihai Adrian IONESCU
Tel.: +41 21 693 3978
Fax: +41 21 693 3640
E-mail

Coordinator

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

EU contribution: EUR 484 540


ELB335, Station 11
1015 Lausanne
Switzerland
Activity type: Higher or Secondary Education Establishments
Administrative contact: Mihai Adrian Ionescu
Tel.: +41 21 693 3978
Fax: +41 21 693 3640
E-mail

Participants

SCIPROM SARL
Switzerland

EU contribution: EUR 138 728


RUE DU CENTRE
1025 Saint-Sulpice
Switzerland
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative contact: Peter Ulrich
Tel.: +41 21 6940414
Fax: +41 21 6940419
E-mail
IBM RESEARCH GMBH
Switzerland

EU contribution: EUR 745 350


SAEUMERSTRASSE
8803 RUESCHLIKON
Switzerland
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative contact: Catherine Trachsel
Tel.: +41 44 724 8289
Fax: +41 44 724 8578
E-mail
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG
Germany

EU contribution: EUR 265 494


Wilschdorfer Landstrasse
01109 Dresden
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative contact: Juergen Faul
Tel.: +49 351 277 4531
Fax: +49 351 277 9 4531
E-mail
RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN
Germany

EU contribution: EUR 165 862


Templergraben
52062 AACHEN
Germany
Activity type: Higher or Secondary Education Establishments
Administrative contact: Joachim Knoch
Tel.: +49 241 8027891
E-mail
INFINEON TECHNOLOGIES AG
Participation ended
Germany

EU contribution: EUR 37 108


Am Campeon 1-12
85579 Neubiberg
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative contact: Bernhard Scholz
Tel.: +49 89 234 22339
Fax: +49 89 234 9550395
E-mail
INTEL MOBILE COMMUNICATIONS GMBH
Germany

EU contribution: EUR 239 345


AM CAMPEON
85579 NEUBIBERG
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative contact: Stefanie Schroeckeneder
Tel.: +49 89 998853 28357
E-mail
TECHNISCHE UNIVERSITAET DORTMUND
Participation ended
Germany

EU contribution: EUR 71 312


AUGUST-SCHMIDT-STRASSE
44227 DORTMUND
Germany
Activity type: Higher or Secondary Education Establishments
Administrative contact: Joachim Knoch
Tel.: +49 231 7553966
Fax: +49 231 7554450
E-mail
FORSCHUNGSZENTRUM JUELICH GMBH
Germany

EU contribution: EUR 493 229


WILHELM JOHNEN STRASSE
52428 JUELICH
Germany
Activity type: Research Organisations
Administrative contact: Volker Marx
Tel.: +49 2461 615831
Fax: +49 2461 612118
E-mail
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

EU contribution: EUR 914 551


RUE LEBLANC
75015 PARIS 15
France
Activity type: Research Organisations
Administrative contact: Marie-Laure Page
Tel.: +33 4 38782796
Fax: +33 4 38785183
E-mail
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy

EU contribution: EUR 6 024


VIA TOFFANO
40125 BOLOGNA
Italy
Activity type: Higher or Secondary Education Establishments
Administrative contact: LUCA SELMI
Tel.: +39 0432 558293
Fax: +39 0432 558251
E-mail
UNIVERSITA DEGLI STUDI DI UDINE
Italy

EU contribution: EUR 244 386


VIA PALLADIO
33100 UDINE
Italy
Activity type: Higher or Secondary Education Establishments
Administrative contact: Luca Selmi
Tel.: +39 0432 558293
Fax: +39 0432 558 251
E-mail
UNIVERSITA DI PISA
Italy

EU contribution: EUR 49 684


Lungarno Pacinotti
56126 PISA
Italy
Activity type: Higher or Secondary Education Establishments
Administrative contact: Gianluca Fiori
Tel.: +39 050 2217596
E-mail
ALMA MATER STUDIORUM-UNIVERSITA DI BOLOGNA
Italy

EU contribution: EUR 244 386


Via Zamboni
40126 BOLOGNA
Italy
Activity type: Higher or Secondary Education Establishments
Administrative contact: Giorgio Baccarani
Tel.: +39 051 2093012
E-mail
Record Number: 95180 / Last updated on: 2016-04-01