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3D Multi-Process Sequential Integration for Smart Sensor Interfaces


Periodic Project report 2

2nd 18 month period report

Final Report

Final report to the comission

Test and test report from TDC in 3D SinC

IDEAS will work on testing the TDC circuit with respect to the target specifications They will design a circuit board to test the circuits

Specification for the analog MOSFET

Specification for visible image sensor (supply voltage, noise, hot carrier injection, reliability specifications) Cost evaluation of the low cost version of FDSOI dedicated for the analog layer and comparison with the standard BULK technology

Low-temperature high-voltage analog MOSFET characterization

Deep analysis of low temperature analog MOSFET, conclusions on the process performance adequation with ST specifications

Periodic Project report 1

1st 18 month period report

Test report physical implementation SinC modules

The SinCSSI modules that havbe been physically produced by ST and LETI shall be tested and characterized and their performance compared to StoA

Project Web-Page

A project web-page will be established and a system will be worked out to allow partners to edit and contribute to the cite. The structure will be finished by m6 but the content will be edited throughout the project live time.

ST 28nm bottom tier processing finished

Delivery of the bottom strata composed of FDSOI technology MOSFET and 4 metal line levels

Data management plan (DMP)

The purpose of the data management plan (DMP) is to define the main elements of the data management policy that will be used by the 3D-MUSE consortium partners with regard to all the datasets that will be generated within the project. As part of the dissemination and exploitation activities, the 3D-MUSE DMP will be drafted and updated during the execution of the project, i.e., it is not a fixed document, but evolves during the lifespan of the project. Updates will be reported with the periodic project reports. In accordance with the H2020 guideline, the 3D-MUSE DMP outlines how research data will be handled during project execution, and after its completion, i.e., post-project, essentially along the lines of exploitation and commercialisation.


Statistical Characterization and Modelling of Gate-Induced Drain Leakage Variability in Advanced FDSOI Devices

Author(s): T. A. Karatsori, C. Cavalcante, J. Lacord, P. Batude, C. Theodorou, G. Ghibaudo
Published in: 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019, Page(s) 1-2, ISBN 978-1-7281-3523-6
Publisher: IEEE
DOI: 10.1109/s3s46989.2019.9320739

Low temperature high voltage analog devices in a 3D sequential integration

Author(s): C. Cavalcante, X. Garros, P. Batude, A. Tataridou, J. Lacord, M. Casse, C. Theodorou, T. Karatsori, R. Gassilloud, C. Fenouillet-Beranger, L. Brunet, O. Rozeau, N. Rambal, F. Gaillard, F. Ponthenier, F. Allain, G. Romano, G. Ghibaudo, J-P. Colinge, M. Vinet, F. Andrieu
Published in: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020, Page(s) 155-156, ISBN 978-1-7281-4232-6
Publisher: IEEE
DOI: 10.1109/vlsi-tsa48913.2020.9203691

28nm FDSOI CMOS Technology (FEOL and BEOL) Thermal Stability for 3D Sequential Integration: Yield and Reliability Analysis

Author(s): C. Cavalcante, C. Fenouillet-Beranger, P. Batude, X. Garros, X. Federspiel, J. Lacord, S. Kerdiles, A. S. Royet, P. Acosta-Alba, O. Rozeau, V. Barral, F. Arnaud, N. Planes, P. O. Sassoulas, E. Ghegin, R. Beneyton, M. Gregoire, O. Weber, C. Guerin, L. Arnaud, S. Moreau, R. Kies, G. Romano, N. Rambal, A. Magalhaes, G. Ghibaudo, J. P. Colinge, M. Vinet, F. Andrieu
Published in: 2020 IEEE Symposium on VLSI Technology, 2020, Page(s) 1-2, ISBN 978-1-7281-6460-1
Publisher: IEEE
DOI: 10.1109/vlsitechnology18217.2020.9265075

Merging PDKs to Build a Design Environment for 3D Circuits: Methodology, Challenges and Limitations

Author(s): O. Billoint, K. Azizi-Mourier, G. Cibrario, D. Lattard, M. Mouhdach, S. Thuries, P. Vivet
Published in: 2019 International 3D Systems Integration Conference (3DIC), 2019, Page(s) 1-5, ISBN 978-1-7281-4870-0
Publisher: IEEE
DOI: 10.1109/3dic48104.2019.9058793

First Demonstration of Low Temperature (≤500°C) CMOS Devices Featuring Functional RO and SRAM Bitcells toward 3D VLSI Integration

Author(s): C. Fenouillet-Beranger, L. Brunet, P. Batude, L. Brevard, X. Garros, T. Mota Frutuoso, M. Casse, J. Lugo, J. Lacord, D. Bosch, N. Bernard, A. Magalhaes-Lucas, M. Ribotta, B. Sklenard, F. Milesi, R. Kies, G. Romano, P. Acosta-Alba, S. Kerdiles, A. Tavernier, C. Vizioz, P. Besson, R. Gassilloud, J. Kanyandekwe, D. Cooper, V. Lapras, W. H. Kim, Y. Sasaki, S. Oh, P. Kang, S. W. Lee, H. Na, J. Arcamone
Published in: 2020 IEEE Symposium on VLSI Technology, 2020, Page(s) 1-2, ISBN 978-1-7281-6460-1
Publisher: IEEE
DOI: 10.1109/vlsitechnology18217.2020.9265092

A review on opportunities brought by 3D-monolithic integration for CMOS device and digital circuit

Author(s): F. Andrieu, P. Batude, L. Brunet, C. Fenouillet-Beranger, D. Lattard, S. Thuries, O. Billoint, R. Fournel, M. Vinet
Published in: 2018 International Conference on IC Design & Technology (ICICDT), 2018, Page(s) 141-144, ISBN 978-1-5386-2550-7
Publisher: IEEE
DOI: 10.1109/icicdt.2018.8399776

Breakthroughs in 3D Sequential technology

Author(s): L. Brunet, C. Fenouillet-Beranger, P. Batude, S. Beaurepaire, F. Ponthenier, N. Rambal, V. Mazzocchi, J-B. Pin, P. Acosta-Alba, S. Kerdiles, P. Besson, H. Fontaine, T. Lardin, F. Fournel, V. Larrey, F. Mazen, V. Balan, C. Morales, C. Guerin, V. Jousseaume, X. Federspiel, D. Ney, X. Garros, A. Roman, D. Scevola, P. Perreau, F. Kouemeni-Tchouake, L. Arnaud, C. Scibetta, S. Chevalliez, F. Aussenac, J
Published in: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Page(s) 7.2.1-7.2.4, ISBN 978-1-7281-1987-8
Publisher: IEEE
DOI: 10.1109/iedm.2018.8614653

3D Sequential Integration: Application-driven technological achievements and guidelines

Author(s): P. Batude, L. Brunet, C. Fenouillet-Beranger, F. Andrieu, J.-P. Colinge, D. Lattard, E. Vianello, S. Thuries, O. Billoint, P. Vivet, C. Santos, B. Mathieu, B. Sklenard, C.-M. V. Lu, J. Micout, F. Deprat, E. Avelar Mercado, F. Ponthenier, N. Rambal, M.-P. Samson, M. Casse, S. Hentz, J. Arcamone, G. Sicard, L. Hutin, L. Pasini, A. Ayres, O. Rozeau, R. Berthelon, F. Nemouchi, P. Rodriguez, J.-B. Pin,
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 3.1.1-3.1.4, ISBN 978-1-5386-3559-9
Publisher: IEEE
DOI: 10.1109/iedm.2017.8268316

Monolithic 3D: an alternative to advanced CMOS scaling, technology perspectives and associated design methodology challenges

Author(s): Pascal Vivet, Sebastien Thuries, Olivier Billoint, Sylvain Choisnet, Didier Lattard, Edith Beigne, Perrine Batude
Published in: 2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2018, Page(s) 157-160, ISBN 978-1-5386-9562-3
Publisher: IEEE
DOI: 10.1109/icecs.2018.8617955

Advanced 3D Technologies and Architectures for 3D Smart Image Sensors

Author(s): Pascal Vivet, Gilles Sicard, Laurent Millet, Stephane Chevobbe, Karim Ben Chehida, Luis Angel Cubero, Monte Alegre, Maxence Bouvier, Alexandre Valentian, Maria Lepecq, Thomas Dombek, Olivier Bichler, Sebastien Thuries, Didier Lattard, Cheramy Severine, Perrine Batude, Fabien Clermidy
Published in: 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2019, Page(s) 674-679, ISBN 978-3-9819263-2-3
Publisher: IEEE
DOI: 10.23919/date.2019.8714886

3DVLSI, Technology and Application

Author(s): S. Cheramy, A. Jouve, C. Fenouillet-Beranger, P. Batude, M. Vinet
Published in: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018, Page(s) 1-5, ISBN 978-1-5386-7627-1
Publisher: IEEE
DOI: 10.1109/s3s.2018.8640158

Novel on-resistance based methodology for MOSFET electrical characterization

Author(s): T.A. Karatsori, K. Bennamane, G. Ghibaudo
Published in: Solid-State Electronics, Issue 168, 2020, Page(s) 107722, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2019.107722

(Invited) 3D Monolithic Integration

Author(s): Laurent Brunet, Perrine Batude, Claire Fenouillet-Beranger, Maud Vinet
Published in: ECS Transactions, Issue 85/8, 2018, Page(s) 125-130, ISSN 1938-5862
Publisher: Electrochemical Society, Inc.
DOI: 10.1149/08508.0125ecst

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