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Contenido archivado el 2022-12-23

Metal-insulator transition and quantum (hopping) transport in disordered systems

Objetivo



During the last 5th international conference (Glasgow UK, 1993) on hopping and related phenomena in different electronic systems specifically close to the metal-insulator transition, it appeared that an important scientific community exists naturally in the NIS and in member countries of INTAS. The community has had about two decades of fruitful research activity (both theory and experiment) in the 'hot' ranges of solid state physics such as Coulomb interaction in phonon assisted hopping, especially the Coulomb gap formation, multi-electron correlation effects in hopping, investigations of metal-insulator transition as a second order phase transition and of scaling theory of localization, hopping phenomena in quantum hall effect and in HTC superconductors, and quantum corrections to metallic conductivity due to localization and electron-electron interaction.

The goals of this project are: to make easier access to some experiments in western countries, to improve the equipment and communication facilities for groups in the NIS; the exchange of ideas and results received ; meetings between scientists of the NIS and of INTAS member countries, including the organization of an annual workshop; and participation by NIS scientists at the next international hopping conference in 1997.

The results obtained will be discussed during annual workshops and at the International Conference on Physics and Semiconductors.

Convocatoria de propuestas

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Régimen de financiación

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Coordinador

Centre National de la Recherche Scientifique
Aportación de la UE
Sin datos
Dirección
Pas de Calais - Picardie
59655 Villeneuve d'Ascq
Francia

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Coste total
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Participantes (7)