Objectif Superconductivity above the temperature of liquid nitrogen in the YBa2Cu3O7 family (YBCO) compounds, and more generally in high-Tc superconducting oxides (HTSO), allows the development of superconducting electronics working at reasonable temperature. Subsequent improvement of electronic properties, such as very fast circuits, may be of importance for information technology and microelectronics. The fundamental building block of most superconducting microelectronic devices involved in information technology is the Josephson junction. The goals of this project were to: - fabricate reproducible superconducting HTSO thin films using promising and complementary techniques (sputtering, electron-beam coevaporation, molecular beam epitaxy and laser ablation); high level characterisation was to be used for the optimisation of the growth process - fabricate and characterise (structural and electrical properties) intrinsic Josephson junctions - demonstrate simple devices using intrinsic Josephson junctions and a Superconducting Quantum Interference Device (SQUID).The goals of this project were to: fabricate reproducible superconducting high critical temperature (Tc) superconducting oxides (HTSO) thin films using promising and complementary techniques (sputtering, electron beam coevaporation, molecular beam epitaxy and laser ablation), High level characterization was to be used for the optimization of the growth process; fabrication and characterize (structural and electrical properties) intrinsic Josephson junctions; demonstrate simple devices using intrinsic Josephson junctions and a superconducting quantum interference device (SQUID).Several results were obtained: development of 2 types of active oxygen sources based on direct current driven and radio frequency driven electron cyclotron plasma techniques, as deposited superconducting thin films using atomic plane by atomic plane growth in an molecular beam expitaxy (MBE) machine (best result on yttrium barium copper oxide (YBCO), coevaporated, sputtered or laser ablated thin films wilth more than 2E10 A m{-2} at 77 K and Tc in the 90 K range on various substrates, sputtered and laser ablated thin films with c-axis in the plane of the substrate (best minimum yield in Rutherford backscattering channelling), development of enabling technologies for low contact resistance and patterning, development of submicron patterning (0.15 micron) by electron beam lithography and ion beam etching, and by focused ion beam, realization of SNIS Josephson junctions operating at 4.2 K and superconductor normal metal superconductor (SNS) operating at 77 K, fabrication of many SQUID on the same chip exhibiting characteristics (Ic and Rnlc product) in a narrow window and finally simulation of basic gates and circuits. Champ scientifique engineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationsradio technologyradio frequencynatural sciencesphysical sciencestheoretical physicsparticle physicsparticle acceleratorengineering and technologymaterials engineeringcoating and filmsnatural sciencesphysical sciencesopticslaser physicsnatural sciencesphysical scienceselectromagnetism and electronicssuperconductivity Programme(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Thème(s) Data not available Appel à propositions Data not available Régime de financement Data not available Coordinateur Thomson CSF Contribution de l’UE Aucune donnée Adresse Domaine de Corbeville 91404 Orsay France Voir sur la carte Coût total Aucune donnée Participants (5) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Centre National de la Recherche Scientifique (CNRS) France Contribution de l’UE Aucune donnée Adresse 1919 route de Mende 34405 Montpellier Voir sur la carte Coût total Aucune donnée NEDERLANDSE PHILIPS BEDRIJVEN BV Pays-Bas Contribution de l’UE Aucune donnée Adresse PROF. HOLSTLAAN, 4 5656 AA EINDHOVEN Voir sur la carte Coût total Aucune donnée UNIVERSITE DE PARIS VII France Contribution de l’UE Aucune donnée Adresse TOUR 23 75251 PARIS Voir sur la carte Coût total Aucune donnée UNIVERSITEIT VAN TWENTE Pays-Bas Contribution de l’UE Aucune donnée Adresse DRIENERLOLAAN, 5217 7500 AE ENSCHEDE Voir sur la carte Coût total Aucune donnée University of Cambridge Royaume-Uni Contribution de l’UE Aucune donnée Adresse New Museums Site Pembroke Street CB2 3QG Cambridge Voir sur la carte Coût total Aucune donnée
