Objetivo The project aimed to develop a technology compatible with X-rays from 7 to 13 , so that resolution down to 0.25 micron may be eventually achieved. The main tasks of this project were: Masks, Resist and XRay Lithography Process. Masks -Non-hydrogenated SiC membranes are fully operational on 2" wafers. Transfer of the process to 4" wafers was shown to be feasible. -In pattern transfer, <0.5 micron resolution was achieved by two techniques: .A subtractive technique, consisting of tungsten R.I.E. involving a trilevel resist process. It was shown to be fully compatible with <0.5 micron dimensions. The technique was analysed in relation to stress, ebeam patterning and quality of image transfer. .Electroplating of Au by a single-layer resist process was achieved. The process was fully consolidated and characterised. Furthermore, a new process was presented allowing the use of thinner absorber structures (34000). Finally, experiments of mask copying by Xray lithography were carried out. Resists -The development of an original positive fluorinated resist was optimised. An original negative resist (PVS) was tested and compared with the silicon negative resist from TOYO SODA and negative MESE resist from Japan synthetic rubber. XRay Lithography Process -The MX 1600 XRay stepper from Micronix was operational within the project. Furthermore, the development work of the laser plasma source provided the project with the most promising alternative source to compact synchrotrons. The project aimed to develop a technology compatible with X-rays from 7 angstroms to 13 angstroms, so that resolution down to 0.25 micron may be eventually achieved. The main tasks of this project were:masks;resist;X-ray;lithography process.Nonhydrogenated silicon carbide membranes are fully operational on 2 inch wafers. Transfer of the process to 4 inch wafers was shown to be feasible. In pattern transfer, less than 0.5 micron resolution was achieved by 2 techniques:a subtractive technique, consisting of tungsten reactive ion etching involving a trilevel resist process;electroplating of gold by a single-layer resist process.The development of an original positive fluorinated resist was optimised.The MX 1600 X-ray stepper from Micronix was operational within the project. The development work of the laser plasma source provided the project with the most promising alternative source to compact synchrotrons. Ámbito científico natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural scienceschemical sciencesinorganic chemistrytransition metalsnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencesopticslaser physics Programa(s) FP1-ESPRIT 1 - European programme (EEC) for research and development in information technologies (ESPRIT), 1984-1988 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador Consiglio Nazionale delle Ricerche (CNR) Aportación de la UE Sin datos Dirección Via Cineto Romano 42 00156 Roma Italia Ver en el mapa Coste total Sin datos Participantes (4) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo Centre National de la Recherche Scientifique (CNRS) Francia Aportación de la UE Sin datos Dirección 15 Quai Anatole France 75700 Paris Ver en el mapa Coste total Sin datos KING'S COLLEGE LONDON Reino Unido Aportación de la UE Sin datos Dirección Strand LONDON Ver en el mapa Coste total Sin datos Thomson CSF Francia Aportación de la UE Sin datos Dirección Domaine de Corbeville 91404 Orsay Ver en el mapa Coste total Sin datos Thomson Microelectronics Srl (SGS) Italia Aportación de la UE Sin datos Dirección Via Carlo Olivetti 20041 Agrate Brianza Milano Ver en el mapa Coste total Sin datos