Periodic Reporting for period 1 - ODESI (Optoelectronic detection of single spin in silicon)
Periodo di rendicontazione: 2016-06-01 al 2018-05-31
We aim at studying spin-qubits in silicon that will be the basis of a building block for QIP with a great potential for scalability. For this reason, the devices will be designed to be compatible with CMOS industry process and will be fabricated in an industry-oriented cleanroom: the CEA-LETI. More specifically, the main goal is the study of donor spin Qbits in silicon. As a result, the main unit is composed of two elements: a donor atoms and a charge detector. The latter is used to measure the spin of the donor thanks to a conversion of quantum information from spin to charge degree of freedom.
Moreover, the presented RF gate-sensing is a promising step toward an easily scalable spin Qbit read-out, completely disconnected to reservoirs. Indeed, we are currently using this dispersive read-out to directly probe a charge exchange between two quantum dots. While here, we have built an electrometer with a dot that need to exchange particle with a reservoir. Thus, we will get rid of any reservoir for the sake of scalability. Once this spin read-out is demonstrated, the next goal is to implement spin-Qbit manipulation schemes. For this purpose, we have developed microwave cavities that will allow us to perform single spin manipulation on many Qbits in parallel.