Stoichiometry and dopant effects on the crystallographic and electronic properties of silicon carbide crystals grown by the sublimation method

Projektinformationen

ID Finanzhilfevereinbarung: INTAS-93-1945

Projekt abgeschlossen

Startdatum 1 September 1994

Enddatum 30 November 1995

Finanziert unter

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Gesamtkosten € 0,00

EU-Beitrag € 30 000,00

Koordiniert durch

Friedrich-Alexander-Universität Erlangen-Nürnberg
Germany

Ziel

Silicon carbide (SiC) is recognised as having great potential for electronic device applications involving high temperatures, high radiation, high frequencies and also high power. A prerequisite for the further advance of a SiC-based semiconductor technology is the availability of low defect bulk crystals with defined electronic and crystallographic properties as a substrate for highly perfect epitaxial layers. The present status of crystal quality does not meet this requirement.

It is generally acknowledged that stoichiometry of the gas phase and dopants during sublimation growth of SiC are key parameters which can influence the crystal modification and defect generation and hence the electronic material properties. But there is a great lack of knowledge on the correlation of constitutional process conditions and crystal quality.

In this research, the effect of dopants and stoichiometry on the crystallographic and electronic properties of SiC crystals, will be studied. The influence of the following parameters will be investigated: mechanical, chemical and thermal treatment methods on single crystallinity; impurity doping and SiC composition of the gas phase on stabilisation of polytypes during the crystal growth process; and transition metal doping on the electronic properties.

Optical, electrical and microstructural properties of the prepared crystal specimens will be analysed by different characterisation methods, e.g. photoluminescence, DLTS, and scanning electron microscopy. Numerical modelling of heat and mass transfer will be applied to give information on the constitutional conditions during the crystal growth process.

The results of experimental and numerical studies will be compared to existing theories on polytype formation in SiC. Based on this analysis, concepts for the development of more advanced models on polytypism will be carried out.

Programm/Programme

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Thema/Themen

• 15 - Condensed Matter Physics

Aufforderung zur Vorschlagseinreichung

Data not available

Finanzierungsplan

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Koordinator

Friedrich-Alexander-Universität Erlangen-Nürnberg

• EU-Beitrag: Keine Daten
• Adresse: Martensstraße 7 ; 91058 Erlangen ; Deutschland
• Gesamtkosten: Keine Daten

Beteiligte (2)

Russian Academy of Sciences

Russland

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• Adresse: 194021 St. Petersburg
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THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE

Vereinigtes Königreich

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• Adresse: Cavendish Laboratory, Madingley Road ; CB3 0HE CAMBRIDGE
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