Objectif Quantum wire (QWR) diode lasers offer a unique system for studying the physics of 1D systems and have also been predicted to yield substantial improvement in both static and dynamic laser performance. The main challenge in this field has been the fabrication of extremely narrow (<50nm wide) wire heterostructures with virtually perfect interfaces and compatible with efficient carrier injection, capture and recombination. Three major fabrication approaches which have been utilized are: etching and regrowth of wire structures starting from quantum well material; patterned disordering of quantum well material; and epitaxial growth on non-planar substrates. The former methods offer high flexibility in the design of the QWR structure, whereas the latter one yields high quality, dense QWR arrays via self-ordering effects during epitaxial growth. The design, fabrication and characteristics of QWR diode laser structures using these three fabrication approaches will be investigated. The QWR heterostructures, based on the GaAs/AlGaAs and InGaAs/AlGaAs systems, will be prepared using growth by organometallic chemical vapour deposition and molecular beam epitaxy. The structural and luminescence properties will be studied using electron microscopy and scanning probe microscopy techniques, and cw as well as pulsed optical spectroscopies. The main features of interest will be the luminescence efficiency and the dynamics of carrier injection and capture. The results of these studies will be employed in the design of efficient QWR lasers with an emphasis on achieving extremely low threshold currents (in the uA range) at room temperature. The laser devices will then be characterized in detail, particularly their optical gain spectra, polarization properties and non-linear gain features. The collaboration will make possible a systematic comparison between the three fabrication approaches mentioned above, exchange of information regarding the effects of reduced dimensionality on the laser properties, and exploration of avenues for optimal designs of these quantum devices. Each party in this collaboration brings demonstrable experience in one or more technical areas related to fabrication and characterization of semiconductor nanostructures and nano-devices. The opportunity of exchanging information about different technological approaches towards the realization of practical nanostructures that will be created by this collaboration is expected to enhance progress significantly in this field. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Thème(s) 12 - Atomic Structure, Lasers and Optics Appel à propositions Data not available Régime de financement Data not available Coordinateur Ecole Polytechnique Fédérale deLausanne Contribution de l’UE Aucune donnée Adresse Ecublens 1015 Lausanne Suisse Voir sur la carte Coût total Aucune donnée Participants (4) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Centre National de la Recherche Scientifique France Contribution de l’UE Aucune donnée Adresse 92225 Bagneux Voir sur la carte Coût total Aucune donnée Russian Academy of Sciences Russie Contribution de l’UE Aucune donnée Adresse 194021 St. Petersburg Voir sur la carte Coût total Aucune donnée Technical University of Moldova Moldavie Contribution de l’UE Aucune donnée Adresse 277012 Kishinau Voir sur la carte Coût total Aucune donnée Technische Universität Berlin Allemagne Contribution de l’UE Aucune donnée Adresse 10623 Berlin Voir sur la carte Coût total Aucune donnée