Obiettivo Quantum wire (QWR) diode lasers offer a unique system for studying the physics of 1D systems and have also been predicted to yield substantial improvement in both static and dynamic laser performance. The main challenge in this field has been the fabrication of extremely narrow (<50nm wide) wire heterostructures with virtually perfect interfaces and compatible with efficient carrier injection, capture and recombination. Three major fabrication approaches which have been utilized are: etching and regrowth of wire structures starting from quantum well material; patterned disordering of quantum well material; and epitaxial growth on non-planar substrates. The former methods offer high flexibility in the design of the QWR structure, whereas the latter one yields high quality, dense QWR arrays via self-ordering effects during epitaxial growth. The design, fabrication and characteristics of QWR diode laser structures using these three fabrication approaches will be investigated. The QWR heterostructures, based on the GaAs/AlGaAs and InGaAs/AlGaAs systems, will be prepared using growth by organometallic chemical vapour deposition and molecular beam epitaxy. The structural and luminescence properties will be studied using electron microscopy and scanning probe microscopy techniques, and cw as well as pulsed optical spectroscopies. The main features of interest will be the luminescence efficiency and the dynamics of carrier injection and capture. The results of these studies will be employed in the design of efficient QWR lasers with an emphasis on achieving extremely low threshold currents (in the uA range) at room temperature. The laser devices will then be characterized in detail, particularly their optical gain spectra, polarization properties and non-linear gain features. The collaboration will make possible a systematic comparison between the three fabrication approaches mentioned above, exchange of information regarding the effects of reduced dimensionality on the laser properties, and exploration of avenues for optimal designs of these quantum devices. Each party in this collaboration brings demonstrable experience in one or more technical areas related to fabrication and characterization of semiconductor nanostructures and nano-devices. The opportunity of exchanging information about different technological approaches towards the realization of practical nanostructures that will be created by this collaboration is expected to enhance progress significantly in this field. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) 12 - Atomic Structure, Lasers and Optics Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Ecole Polytechnique Fédérale deLausanne Contributo UE Nessun dato Indirizzo Ecublens 1015 Lausanne Svizzera Mostra sulla mappa Costo totale Nessun dato Partecipanti (4) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Centre National de la Recherche Scientifique Francia Contributo UE Nessun dato Indirizzo 92225 Bagneux Mostra sulla mappa Costo totale Nessun dato Russian Academy of Sciences Russia Contributo UE Nessun dato Indirizzo 194021 St. Petersburg Mostra sulla mappa Costo totale Nessun dato Technical University of Moldova Moldova Contributo UE Nessun dato Indirizzo 277012 Kishinau Mostra sulla mappa Costo totale Nessun dato Technische Universität Berlin Germania Contributo UE Nessun dato Indirizzo 10623 Berlin Mostra sulla mappa Costo totale Nessun dato