Skip to main content

Article Category

News

Article available in the folowing languages:

GOSSAMER project : Gigascale Oriented Solid State flAsh Memory for EuRope”: Main results are now available!

The GOSSAMER project aims at the development of the technology for very high density Non Volatile Memories for mass storage applications down to the 22 nm technology node.

The project addresses for the first time the development of large size NAND Flash memories based on the charge trapping mechanism, instead of the conventional floating gate concept, for technology generations in the range of 36-28nm. The project was started in 2008 with the target to develop a NAND Flash memory technology for mass storage based on the charge trapping mechanism, instead of the conventional floating gate concept, addressing technology generations in the range of 36-28nm. The final objective of the project was to demonstrate the potential of the concept on demonstrator, realized by the industrial partners, with a target size close to the foreseen upper limit of the technology, in the order of the Gigabyte (=8 Gigabit). To see the results : http://www.fp7-gossamer.eu/index.php?id=141