ICDS-19 - Defects in Semiconductors
21 July 1997 - 21 July 1997
Portugal
The latest International Conference on Defects in Semiconductors, ICDS-19, will take place in Aveiro, Portugal, on 21-25 July 1997.
The ICDS conference series covers a broad range of topics on the fundamental properties of defects and impurities in semiconductors. ICDS-19 will focus on work being carried out on the wide-band-gap semiconductors (GaN being a key issue), with their possible application in high temperature devices. A topic of particular interest will be radiation effects on detector materials.
The conference programme aims to provide participants with an insight into the latest developments in understanding and exploiting defects.
For further information, please contact:
Universidade de Aveiro
Prof. Doutora Helena Nazaré
Departamento de Fisica
P-3810 Aveiro
Tel. +351-34-370200; Fax +351-34-28600
E-mail: mhnazare@fis.ua.pt
or
Kings College London
Prof. Gordon Davies
Physics Department
The Strand
London WC2R 2LS
United Kingdom
Tel. +44-171-8732573; Fax +44-171-8732423
E-mail: g.davies@kcl.ac.uk
The ICDS conference series covers a broad range of topics on the fundamental properties of defects and impurities in semiconductors. ICDS-19 will focus on work being carried out on the wide-band-gap semiconductors (GaN being a key issue), with their possible application in high temperature devices. A topic of particular interest will be radiation effects on detector materials.
The conference programme aims to provide participants with an insight into the latest developments in understanding and exploiting defects.
For further information, please contact:
Universidade de Aveiro
Prof. Doutora Helena Nazaré
Departamento de Fisica
P-3810 Aveiro
Tel. +351-34-370200; Fax +351-34-28600
E-mail: mhnazare@fis.ua.pt
or
Kings College London
Prof. Gordon Davies
Physics Department
The Strand
London WC2R 2LS
United Kingdom
Tel. +44-171-8732573; Fax +44-171-8732423
E-mail: g.davies@kcl.ac.uk