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Content archived on 2024-06-16

Nitride Intersubband Devices at Telecommunication Wavelengths

Project description


Optical, opto-electronic, photonic functional components

This project aims at investigating the building blocks of an emerging semiconductor technology for ultra-high bit�rate optoelectronic devices operating at fibre-optics telecommunication wavelengths. The advanced materials that we will investigate are nitride-based heterostructures (GaN/Al(Ga)N, GaN/AlInN). We will engineer the electronic quantum confinement at a nanometre scale to realize active devices relying on intersubband absorption/emission at 1.3-1.55 um. The ultimate deliverables are high-speed photodetectors, optical switches and modulator devices. We will also investigate optically and electrically pumped emitting devices as stepping stones towards advanced unipolar sources (Quantum Fountain and Quantum Cascade lasers/amplifiers). While existing semiconductor technology is dominated by InP-based interband devices, nitride intersubband devices will provide novel functionalities and superior performances like wavelength tunability, speed, high power handling capabilities, and material hardness. The potential of intersubband devices has already been demonstrated at mid- and far-IR wavelengths using GaAs- or InP-based materials. Our project doesn�t target the operating principles but will exploit the know-how acquired at longer wavelengths to push this family of devices to unprecedented short wavelengths, thanks to the large conduction band offset offered by nitride heterostructures. Establishing a new state-of-the-art for growth and processing of nitride semiconductors, and developing an advanced know-how on nitride devices are major challenges of the project. The consortium regroups world�class experts on nitride technologies and intersubband devices, and the chosen strategies have been chosen to minimize the risks. This high-risk, but achievable project will enable Europe to capitalize on SandT advances, developing a lead with respect to USA and Japan competitors and preparing the future transfer of this emerging technology to the optoelectronic industry.

Fields of science (EuroSciVoc)

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Topic(s)

Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.

Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

FP6-2003-IST-2
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Funding Scheme

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STREP - Specific Targeted Research Project

Coordinator

UNIVERSITE PARIS-SUD XI
EU contribution
€ 315 500,00
Address
15 Rue Georges Clemenceau
91405- Orsay-
France

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Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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Participants (9)

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