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Solid state diffusion for atomically sharp interfaces in semiconductor-superconductor hybrid structures

Project description

A matchmaker’s delight strengthens the field of superconducting optoelectronics

Semiconductors, materials that literally ‘semi-conduct’ electricity, have revolutionised our lives with applications in everything from consumer electronics and solar cells to lasers. Integrating semiconductors with superconductors opens the door to limitless possibilities of device functionality and new applications including quantum processing, communication and encryption. However, fine-tuning and optimising the actual physical interface between the two types of materials has been challenging due to lack of control. With the support of the Marie Skłodowska-Curie Actions programme, the SuperCONtacts project intends to overcome these limitations with a new fabrication technique that will lead to the realisation of atomically sharp superconductor–semiconductor interfaces.

Objective

The emerging field of superconducting optoelectronics has the potential to impact future quantum processing, communication and encryption. Hybrid light-emitting diodes exhibit emission of entangled photons enhanced by the superconducting state, while novel superconductor (Su) based lasers and quantum light sources have been proposed. Despite the amount of research done in semiconductor (Se) p-n physics and superconductivity, the practical integration between these two field of research is poor mainly due to the weak control of high quality Se/Su interfaces.
This project proposes to overcome these limitations with a new fabrication technique, based on the metallic diffusion of metals in Se nanowires (NWs), for the realization of atomically sharp Su/Se interfaces with an epitaxial relationship.
Starting from a material search I will then investigate the Al (Tc~1K) diffusion into n-doped InAs NWs as well as V and Nb (all Tc>5 K) diffusion into InAs, Si, Ge and GAs NWs. The band structures and resulting contact types (Schottky or Ohmic) of the different material systems will be studied numerically and tested at cryogenic temperatures to find the best material combination. Doping of the nanowires will be tuned to demonstrate superconducting correlations in both p- and n-doped NWs, an essential step for the realization of superconducting diodes. Diffusion through in-situ (S)TEM heating experiments will allow me to control the Su/Se/Su junctions up to the ultimate limit of few nanometers. These ultra-short JJs will allow to enhance the superconducting correlations. Ballistic transport will be probed down to ultra-low temperatures (~10 mK). and the quantification of the mean free path and the quality of the interfaces will take place. By embedding these ultra-short JJs in a superconducting quantum interference device I will be able to control the intensity supercurrent as well as achieving ultimate magnetic-sensitivity ready for novel technological applications.

Coordinator

CONSIGLIO NAZIONALE DELLE RICERCHE
Net EU contribution
€ 171 473,28
Address
PIAZZALE ALDO MORO 7
00185 Roma
Italy

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Region
Centro (IT) Lazio Roma
Activity type
Research Organisations
Links
Total cost
€ 171 473,28