Periodic Reporting for period 1 - CONCEPT (Crystalline Oxides for Next Generation Computing and Emerging Photonic Technologies)
Reporting period: 2024-01-01 to 2024-12-31
The demand for faster and more energy-efficient computing is pushing traditional silicon-based technologies to their limits. As electronic devices become smaller and smaller, fundamental physical constraints hinder further progress, requiring new materials and device architectures. At the same time, Europe faces economic and strategic challenges in the semiconductor industry, underscoring the need for increased technological sovereignty as emphasized in the European Chips Act.
The CONCEPT project addresses these challenges by developing advanced functional materials for next-generation computing and photonics. It focuses on leveraging atomic layer deposition (ALD) to integrate epitaxial complex oxides, particularly ferroelectrics, into semiconductor-based devices. These materials offer key properties needed for applications such as neuromorphic computing and optical communication.
By demonstrating that high-quality (complex) oxide materials can be produced under industry-compatible conditions, CONCEPT aims to bridge the gap between research and commercial applications, enabling the wider adoption of these materials in electronic consumer devices.
CONCEPT is expected to drive innovation in ICT materials and device integration, reinforcing Europe’s role in digital transformation and technological provess. It supports the development of energy-efficient computing hardware, attempts to strengthen European semiconductor supply chains, and aligns with sustainability goals by promoting non-toxic ferroelectric materials for low-energy consuming electronics. Additionally, the project contributes to scientific knowledge by advancing the understanding of complex oxide and ferroeelectrics behavior, and supports workforce development by engaging researchers, engineers, and industry professionals.
By addressing key technological and strategic challenges, CONCEPT aims to position Europe at the forefront of ICT innovation while ensuring sustainable and competitive growth in the field of advanced materials and device engineering.
The CONCEPT project addresses these challenges by developing advanced functional materials for next-generation computing and photonics. It focuses on leveraging atomic layer deposition (ALD) to integrate epitaxial complex oxides, particularly ferroelectrics, into semiconductor-based devices. These materials offer key properties needed for applications such as neuromorphic computing and optical communication.
By demonstrating that high-quality (complex) oxide materials can be produced under industry-compatible conditions, CONCEPT aims to bridge the gap between research and commercial applications, enabling the wider adoption of these materials in electronic consumer devices.
CONCEPT is expected to drive innovation in ICT materials and device integration, reinforcing Europe’s role in digital transformation and technological provess. It supports the development of energy-efficient computing hardware, attempts to strengthen European semiconductor supply chains, and aligns with sustainability goals by promoting non-toxic ferroelectric materials for low-energy consuming electronics. Additionally, the project contributes to scientific knowledge by advancing the understanding of complex oxide and ferroeelectrics behavior, and supports workforce development by engaging researchers, engineers, and industry professionals.
By addressing key technological and strategic challenges, CONCEPT aims to position Europe at the forefront of ICT innovation while ensuring sustainable and competitive growth in the field of advanced materials and device engineering.
During the first reporting period, CONCEPT researchers have advanced material synthesis, optimized atomic layer deposition techniques, and integrated oxide materials into pre-prototype devices. Significant progress has been made in the development of ALD processes for ferroelectric (Hf,Zr)O2 (HZO) and BaTiO₃ (BTO). Current work is focused on refining process parameters to enable high-quality epitaxial film growth at industry-compatible temperatures.
Progress was also made in refining a broader range of ALD processes for complex oxides. First-principles modeling guided precursor selection, and new metal beta-diketonate precursors were synthesized and tested for stability. Initial deposition tests demonstrated precise stoichiometric control, critical for device reliability. These advances lay the groundwork for further scaling and integration into functional electronic components.
CONCEPT is also working on integrating these materials into device architectures. Neuromorphic computing applications were explored through the fabrication and testing of Ferroelectric Tunnel Junctions (FTJs) and Ferroelectric Field-Effect Transistors (FeFETs) based on model materials from PLD/MBE. Early results indicate multi-state memory behavior, a crucial property for artificial synapses in energy-efficient computing. Additionally, BTO-based photonic devices were characterized, with electro-optic measurements confirming their potential for high-speed optical communication.
Work progressed on scaling these processes for industrial application. A production-ready 8-inch wafer-compatible ALD reactor is being designed and assembled. Digital modeling is used to optimize precursor distribution and temperature uniformity, ensuring reproducibility for large-scale manufacturing.
Looking ahead, CONCEPT will continue optimizing deposition techniques, improving device performance, and scaling fabrication methods to meet industry standards. The progress made so far positions the project to make a substantial impact on the future of oxide-based electronics in ICT.
Progress was also made in refining a broader range of ALD processes for complex oxides. First-principles modeling guided precursor selection, and new metal beta-diketonate precursors were synthesized and tested for stability. Initial deposition tests demonstrated precise stoichiometric control, critical for device reliability. These advances lay the groundwork for further scaling and integration into functional electronic components.
CONCEPT is also working on integrating these materials into device architectures. Neuromorphic computing applications were explored through the fabrication and testing of Ferroelectric Tunnel Junctions (FTJs) and Ferroelectric Field-Effect Transistors (FeFETs) based on model materials from PLD/MBE. Early results indicate multi-state memory behavior, a crucial property for artificial synapses in energy-efficient computing. Additionally, BTO-based photonic devices were characterized, with electro-optic measurements confirming their potential for high-speed optical communication.
Work progressed on scaling these processes for industrial application. A production-ready 8-inch wafer-compatible ALD reactor is being designed and assembled. Digital modeling is used to optimize precursor distribution and temperature uniformity, ensuring reproducibility for large-scale manufacturing.
Looking ahead, CONCEPT will continue optimizing deposition techniques, improving device performance, and scaling fabrication methods to meet industry standards. The progress made so far positions the project to make a substantial impact on the future of oxide-based electronics in ICT.
As this is the first reporting period, results remain preliminary, but important advances have been made that push beyond the current state of the art. One of the key breakthroughs has been the successful development of low-temperature ALD processes for epitaxial ferroelectrics and oxide semiconductors. These processes enable high-quality film growth at temperatures suitable for semiconductor manufacturing, addressing a major barrier to the integration of complex oxides in next-generation computing and photonic applications.
Initial benchmarking of neuromorphic devices and photonic components has provided valuable insights into their performance potential. Ferroelectric synaptic devices have demonstrated stable switching behavior and promising endurance, reinforcing their viability for energy-efficient, scalable neuromorphic computing architectures. Similarly, characterization of BaTiO₃-based electro-optical modulators has confirmed key material properties required for high-speed, low-power photonic applications, which are crucial for modern communication systems.
Further research is required to refine deposition techniques, optimize device integration, and expand characterization studies. Additionally, collaboration with industry stakeholders and standardization efforts will be critical to ensuring that these innovations transition from research to commercial adoption. Moving forward, the project will continue to develop these technologies while exploring opportunities for broader impact in the semiconductor and photonics sectors.
Initial benchmarking of neuromorphic devices and photonic components has provided valuable insights into their performance potential. Ferroelectric synaptic devices have demonstrated stable switching behavior and promising endurance, reinforcing their viability for energy-efficient, scalable neuromorphic computing architectures. Similarly, characterization of BaTiO₃-based electro-optical modulators has confirmed key material properties required for high-speed, low-power photonic applications, which are crucial for modern communication systems.
Further research is required to refine deposition techniques, optimize device integration, and expand characterization studies. Additionally, collaboration with industry stakeholders and standardization efforts will be critical to ensuring that these innovations transition from research to commercial adoption. Moving forward, the project will continue to develop these technologies while exploring opportunities for broader impact in the semiconductor and photonics sectors.