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Fabrication and Evaluation of SpinFET for Spintronics Applications

Project description

New type of transistor better suited for advanced electronics

Modern electronics face growing demands for energy efficiency and high-speed performance. With the support of the Marie Skłodowska-Curie Actions programme, the FESSA project will create a new type of transistor called spin field effect transistor (spin-FET). Unlike traditional transistors, spin-FETs use a special material called a topological insulator to control electron flow based on electron spin rather than just their charge. This approach could lead to smaller, low-power devices that work well with advanced circuits. Using advanced fabrication techniques, including high-quality film deposition and state-of-the-art nanotechnology facilities, FESSA will engineer efficient topological insulator/ferromagnetic interfaces. Project work could enable faster, more efficient devices for quantum computing, microwave systems and other high-technology applications.

Objective

"""Fabrication and Evaluation of SpinFET for Spintronics Applications” (FESSA) is a project that aims to demonstrate a miniaturized, low-power, and contact resistance engineered spin Field Effect Transistor (spin-FET) with a channel formed from a topological insulator (TI) rather than a conventional semiconductor material. Besides the opportunity for original results in materials science device physics, and it provides an innovative approach suitable for integrating into spintronic-CMOS hybrid circuits that address the need for low loss electronics to mitigate climate change. FESSA will use an interdisciplinary approach with multi-physics concepts to achieve a compact design with potential performance suitable for instrumentation systems for low noise, highly sensitive, rf/microwave, and mixed signal measurements/detection.

The spin-transistor action will be achieved using gating effects to modify the spin transport properties of the TI channel between ferromagnetic (FM) source and drain contacts. FESSA will be achieved using high quality films deposited using the multi-chamber Royce deposition system (one of its kind) for efficient interface engineering, achieving low impedance mismatch at a TI/FM interface with high spin transparency. The fabrication of spin-FET will be achieved using Leeds Nanotechnology Cleanroom facility of ISO 5 (class 100) containing a range of state-of-the-art equipment to suit micro and nano-fabrication. Spin-FET action will depend critically on the TI/FM interfaces, and will be optimised electrical characterization with various geometries using the phenomenon of spin Hall effect and its inverse (STFMR, SHE, ISHE, non-local & AC/DC measurements, and GHz probe station measurement system). FESSA will have widespread implications in the field of high-speed operation capabilities and in the development of new hardware-based quantum and microwave devices with advanced device properties."

Fields of science (EuroSciVoc)

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

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HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

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(opens in new window) HORIZON-MSCA-2024-PF-01

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Coordinator

UNIVERSITY OF LEEDS
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 276 187,92
Address
WOODHOUSE LANE
LS2 9JT Leeds
United Kingdom

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Region
Yorkshire and the Humber West Yorkshire Leeds
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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