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Wafer scale dielectrics on two-dimensional semiconductors for high-performance field effect transistors

Project description

Breakthrough dielectric material to transform sensor technology

The semiconductor market, dominated by field-effect transistors (FETs), is currently worth USD 607.40 billion and is set to grow significantly. Atomically thin body (ATB) semiconductors such as molybdenum disulfide (MoS2) have tremendous potential for ultra-sensitive sensors and detectors. However, MoS2 FETs face challenges like inconsistent performance, poor signal-to-noise ratios and scaling issues, which hinder their commercialisation. The ERC-funded Dielectrix project plans to develop a high-quality zirconium dioxide (ZrO2) dielectric that creates a clean interface with MoS2. This should enable high-performance, reliable and scalable FETs ready for industrial production. Dielectrix will demonstrate wafer-scale fabrication of MoS2, validate their high performance, assess the market and engage industry to commercialise this technology for the market of sensors.

Objective

The current semiconductor market – dominated by field effect transistors (FETs) is valued at $607.40 billion per year (projected to reach $980.80 billion by 2029). A significant portion of this market involves applications such as in high-performance sensing/detection. FETs based on atomically thin body (ATB) semiconductors such as molybdenum disulphide (MoS2) have tremendous potential for ultra-sensitive sensors and detectors in the near term. FETs for these applications can be integrated in back end of the line (BEOL) processes where the materials and integration requirements are less stringent – compared to FETs for processor chips. However, commercialization of MoS2 FETs has been slowed by the lack of stable and reproducible device operation that gives rise to poor signal to noise ratios. This has led to poor scalability, difficulty in achieving consistent electrical characteristics, and integration challenges with existing technology which has hindered the widespread adoption of MoS2 FETs for sensing and detection. Therefore, there is an urgent need to overcome these challenges to realize the full market potential of MoS2 FETs. Research supported by the PI’s ERC Advanced Grant has led to a transformative breakthrough in developing a high quality zirconium dioxide (ZrO2) dielectric that forms an utra-clean interface with MoS2 so that highly stable and consistent FETs can be realised. This discovery has demonstrated the feasibility of high-performance, reliable MoS2 FETs with the potential for industrial-scale production – which has the potential for revolutionise the sensor/detection FETs market. This Proof of Concept aims to take the necessary commercial and technical steps to bring this innovation to market: demonstrate wafer-scale fabrication of MoS2 /ZrO2 FETs, validate their high performance, conduct a critical market assessment to develop a business plan, and engage with industry and end-users to establish a clear route to commercialization.

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HORIZON-ERC-POC - HORIZON ERC Proof of Concept Grants

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Call for proposal

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(opens in new window) ERC-2024-POC

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Host institution

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 150 000,00
Address
TRINITY LANE THE OLD SCHOOLS
CB2 1TN CAMBRIDGE
United Kingdom

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Region
East of England East Anglia Cambridgeshire CC
Activity type
Higher or Secondary Education Establishments
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Total cost

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Beneficiaries (1)

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