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Content archived on 2024-04-15

Assessment of Silicon MBE Layers

Objective

The objective of this project was to improve the characteristics of silicon epitaxial layers grown by Molecular Beam Epitaxy (MBE). Capability of growing structures for microelectronic devices, application of appropriate methods to assess the epitaxial material and aspects of improved Si MBE process control were also addressed.
The project aimed to:
a)grow silicon layers by MBE
b)measure deposition conditions in situ
c)implementation and development of techniques for the characterisation of MBE layers.
This information was used to optimise growth conditions.
The objective of this project was to improve the characteristics of silicon epitaxial layers grown by molecular beam epitaxy (MBE). Capability of growing structures for microelectronic devices, application of appropriate methods to assess the epitaxial material and aspects of improved silicon MBE process control were also addressed. The project aimed to:
grow silicon layers by MBE;
measure deposition conditions in situ;
implement and develop techniques for the characterisation of MBE layers.

Submicron n (antimony) and p (gallium arsenide) doped MBE layers were grown and analysed in detail and the results used for in situ doping control. Multilayer structures for high frequency device applications were made and assessed showing flat doping profiles and sharp transitions. Spreading resistance profiling, secondary ion mass spectroscopy (SIMS) and preferential etching proved to be the most useful set of assessment techniques. The development of an improved process control instrumentation, based on the use of a spectroscopic ellipsometer, was worked on.
For objectives a) and b),submicron n(Sb) and p(GaAs) doped MBE layers were grown and analysed in detail and the results used for in situ doping control. Multilayer structures for high-frequency device applications were made and assessed showing flat doping profiles and sharp transitions. Spreading Resistance profiling, SIMS and preferential etching proved to be the most useful set of assessment techniques. For objective c), ISARIBER, who joined the project in June1987, worked on the development of an improved process control instrumentation, based on the use of a spectroscopic ellipsometer.
Silicon MBE is potentially a key process in the production of future generations of Si and Si-related devices. As a first approach, using the benefits of low growth temperature and precise control of layer thickness and doping profiles in any sequence, it is well suited for high-speed devices and other integrated circuit applications. Furthermore, Si MBE also offers advantages for three-dimensional integration, because local epitaxial structures can be realised if a prepatterned substrate is used. Finally , using the wide choice of material combinations and layer numbers made available, SiMBE can open up a broader field of application for novel devices, eg SiGe heterostructures and superlattices, and heterojunctions with IIIV alloys. This project has been contributing to these objectives by further improving the quality of the layers achievable by MBE. Additionally, a range of characterisation techniques for the assessment of the MBE material have been produced which may find broad application in the charac erisation of Si films.

Topic(s)

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Call for proposal

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Funding Scheme

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Coordinator

Daimler-Benz AG
EU contribution
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Address
Wilhelm-Runge-Straße 11
89013 Ulm
Germany

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Total cost
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Participants (2)