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Basic Technologies for GaInAs MISFETs

Objective

A solid solution of InGaAs epitaxially grown on semi-insulating InP substrates shows promise for high-speed logic devices as well as for integrated optoelectronic circuits for 1300-1500 nm wavelengths. The objective of this project was to fabricate insulated gate field-effect transistors (MISFETs) on GaInAs.
The three main tasks were to:
-evaluate the influence of the InP substrate quality on the overlying devices and to improve accordingly its quality
-obtain a better understanding of the basic phenomena at the interface between the insulator and the InGaAs
-explore the possibilities of ion implantation, compared to MOCVD epitaxy, for implementing active devices in this ternary compound.
A reliable low pressure metal organic vapour phase epitaxy (LP MOVPE) process capable of metal insulator semiconductor field effect transistor (MISFET) device production has been developed on a commercially available MOVPE system. Stable MISFETs with transconductances of 300 ms/mm could be fabricated on these structures. The high quality material produced is not only suitable for the special structure of metal insulator semiconductor field effect transistors (MISFEP), but also for a variety of other devices.

A solid solution of indium gallium arsenide (InGaAs) epitaxially grown on semiinsulating indium phosphide (InP) substrates shows promise for high speed logic devices as well as for integrated optoelectronic circuits for 1300 to 1500 nm wavelengths. The objective of this project was to fabricate insulated gate field effect transistors (MISFET) on gallium indium arsenical (gaInAs). The 3 main tasks were: to evaluate the influence of the InP substrate quality on the overlying devices; to obtain a better understanding of the basic phenomena at the interface between the insulator and the InGaAs; and to explore the possibilities of ion implantation, compared to metal organic chemical vapour deposition (MOCVD) epitaxy, for implementing active devices in this ternary compound. Full scale equipment for InP synthesis and for crystal pulling under a magnetic field was installed and tested. Large semiinsulating InP crystals (up to 3 inches in diameter) weighing more than 4 kg were successfully grown with low dislocation density. Good progress was achieved in growth uniformity on 50 mm wafers by MOCVD (thickness less than 3 percent, composition less than 2 percent, doping level less then 5 percent). Various technological processes for high speed logic devices and integrated optoelectronics were optimized. Typical transconductance for E and D mode MISFET obtained was 300 ms/mm and 140 ms/mm respectively, while complete stability of the drift or drain current is observed when silicon nitride (Si3N4) is used as insulator. Besides the strenthening of the European supply of InP wafers for integrated optoelectronics, this project investigated new active devices in the III-V family based on InP. This is of key interest for the development of low cost optical communication systems.
Full-scale equipment for InP synthesis and for crystal pulling under a magnetic field was installed and tested. Large semiinsulating InP crystals (up to 3"in diameter) weighing more than 4kg were successfully grown with low dislocation density (around103EPD.cm-2).
Good progress was achieved in growth uniformity on 50mm wafers by MOCVD (thickness <3%, composition <2%, doping level <5%).
Various technological processes for high-speed logic devices and integrated optoelectronics were optimised. Typical transconductance for E and D-mode MISFET obtained was 300ms/mm and 140ms/mm respectively, while complete stability of the drift of draincurrent is observed when Si3N4 is used as insulator.
Besides the strengthening of the European supply of InP wafers for integrated optoelectronics, this project investigated new active devices in the IIIV family based on InP. This is of key interest for the development of low-cost optical communication sys tems.

Coordinator

Laboratoire d'Électronique Philips
Address
22 Avenue Descartes
94453 Limail-brevannes
France

Participants (3)

AIXTRON GmbH
Germany
Address
Jülicher Straße 336-338
52070 Aachen
Rheinisch-Westfälische Technische Hochschule Aachen (RWTH)
Germany
Address
Sommerfeldstraße 24
52074 Aachen
WACKER-CHEMIE GMBH
Germany
Address

8263 Burghausen