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Content archived on 2024-04-16

Bipolar Advanced Silicon for Europe

Publications

VERY HIGH SPEED BIPOLAR TECHNOLOGY AND CIRCUITS TIPBASE : BIPOLAR ADVANCED SILICON FOR EUROPE

Author(s): LINSSEN A J (N.V. PHILIPS GLOEILAMPEN FABRIEKEN, EINDHOVEN (NL)), TREITINGER L (SIEMENS AKTIENGESELLSCHAFT, MUENCHEN (DE)), KAISER R (TEG, HEILBRONN (DE)), WARD P (SGS-THOMSON MICROELECTRONICS SRL, CATANIA (IT)), SMITH J (PLESSEY U.K. LTD., CASWELL (GB))
Published in: EXTRACT: ESPRIT '90 : CONFERENCE PROCEEDINGS (1990) PP. 99-104 (EUR 13148) KLUWER ACADEMIC PUBLISHERS GROUP, PO BOX 322, 3300 AH DORDRECHT (NL) ISBN 0-7923-1039-X, 1990, Page(s) 99-104, ISBN 0-7923-1039-X

PREAMORPHIZATION TECHNIQUES FOR SHALLOW JUNCTIONS IN SI

Author(s): IMSCHWEILER J (TELEFUNKEN ELECTRONIC GMBH, HILBRONN (DE))
Published in: EXTRACT: ESPRIT '90 : CONFERENCE PROCEEDINGS (1990) PP. 88-98 (EUR 13148) KLUWER ACADEMIC PUBLISHERS GROUP, PO BOX 322, 3300 AH DORDRECHT (NL) ISBN 0-7923-1039-X, 1990, Page(s) 88-98, ISBN 0-7923-1039-X

LOW TEMPERATURE ION-ASSISTED EPITAXY OF DEPOSITED SILICON LAYERS

Author(s): PRIOLO F (UNIVERSITA DI CATANIA, DIPARTIMENTO DI FISICA (IT)), SPINELLA C (UNIVERSITA DI CATANIA, DIPARTIMENTO DI FISICA (IT))
Published in: EXTRACT: ESPRIT '90 : CONFERENCE PROCEEDINGS (1990) PP. 105-116 (EUR 13148) KLUWER ACADEMIC PUBLISHERS GROUP, PO BOX 322, 3300 AH DORDRECHT (NL) ISBN 0-7923-1039-X, 1990, Page(s) 105-116, ISBN 0-7923-1039-X

TIPBASE 2016 BIPOLAR ADVANCED SILICON FOR EUROPE: ADVANCED BIPOLAR PROCESSES FOR HIGH-PERFORMANCE ANALOG APPLICATIONS

Author(s): VAN DER VELDEN J W A (PHILIPS RESEARCH LABORATORIES, BIPOLAR TECHNOLOGY RESEARCH AND DEVELOPMENT, EINDHOVEN (NL))
Published in: EXTRACT: ESPRIT '90 : CONFERENCE PROCEEDINGS (1990) PP. 117-130 (EUR 13148) KLUWER ACADEMIC PUBLISHERS GROUP, PO BOX 322, 3300 AH DORDRECHT (NL) ISBN 0-7923-1039-X, 1990, Page(s) 117-130, ISBN 0-7923-1039-X

TIPBASE - BIPOLAR ADVANCED SILICON FOR EUROPE

Author(s): PRUIJMBOOM A (PHILIPS RESEARCH LABORATORY, EINDHOVEN (NL))
Published in: EXTRACT: ESPRIT 1991 : CONFERENCE PROCEEDINGS (1991) PP. 91-100 (EUR 13853) THE OFFICE FOR OFFICIAL PUBLICATIONS OF THE EUROPEAN COMMUNITIES, L-2985 LUXEMBOURG, 1991, Page(s) 91-100

INTERNAL GETTERING AS A FUNCTION OF THE WAFER POSITION IN THE ORIGINAL CRYSTAL ROD

Author(s): GRAFF K (TELEFUNKEN ELECTRONIC GMBH, HEILBRONN (DE))
Published in: EXTRACT: ESPRIT '90 : CONFERENCE PROCEEDINGS (1990) PP. 77-87 (EUR 13148) KLUWER ACADEMIC PUBLISHERS GROUP, PO BOX 322, 3300 AH DORDRECHT (NL) ISBN 0-7923-1039-X, 1990, Page(s) 77-87, ISBN 0-7923-1039-X

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