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Transport of Spins in Semiconductors

Objective

A Monte Carlo spintronic device simulator will be developed. This simulator will be the first of its kind taking into account the concurrent action of the D'yakonov-Perel', Elliot-Yafet, Bir-Aronov-Pikus and hyperfine interaction spin relaxation mechanisms . The underlying band structure model for the simulator will be extended to include spin and the relevant spin splittings, and from there the spin dynamics will follow. The Datta-Das and the Resonant Spin Lifetime transistors will be analysed. Other propos als for spin injectors (ferromagnet/tunnel barrier/semiconductor, RTD with dilute magnetic semiconductor well layer, asymmetric RTDs) will be studied, and improved and/or novel designs will result. Since lots of the suggested devices rely on transport with purely quantum effects (e.g. resonant tunnelling, interface properties) in nanostructures, different methods for the computation of the transmission coefficients will be studied. In particular, the performance of the Multiband Quantum Transmitting Boundar y Method will be tested against the Green's function approach. The transmission coefficients (scattering matrices in their general form) completely characterise quantum transport, and they will be used to treat the coupling of the semiclassical and quantum regions in the device simulator.

Call for proposal

FP6-2002-MOBILITY-12
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Funding Scheme

IRG - Marie Curie actions-International re-integration grants

Coordinator

UNIVERSITAT AUTONOMA DE BARCELONA
Address
Campus Universitari S/n
08193 Bellaterra (Cerdanyola Del Valles)
Spain