Periodic Reporting for period 2 - ENLIGHT (Novel passivation technique for compound semiconductor devices)
Reporting period: 2023-05-01 to 2024-10-31
Comptek Solutions has developed a novel processing technology, branded as Kontrox(TM), that improves performance, power efficiency, reliability and manufacturing yields of crucial compound semiconductor devices like lasers, IR sensors, microLEDs, RF and power electronic chips. When applied to chips in billions of electronic devices and cars worldwide, Kontrox will have a tremendous impact in global sustainability by reducing their overall power consumption and by reducing the waste generated during their manufacturing.
The technology has been validated with industrial partners in different application areas, having demonstrated up to 250% higher efficiency and up to 90x less power consumption in microLEDs, up to 50% increase in edge emitting laser power outputs combined with important lifetime and reliability improvements, and we have demonstrated significant decrease in material surface/interface defects, leading to performance improvements in transistor related applications.
The targets of this project are to validate the technology for industrial applications, implement it into existing manufacturing flows and combine it with existing processes. Ie. Thin film deposition techniques. We aim to demonstrate that Kontrox is an applicable and scalable process for multiple materials and applications, while meeting the semiconductor industry requirements.
The objectives set in the project are:
1. Establish partnerships with key stakeholders: chip manufacturers, equipment manufacturers, and suppliers of specialty materials
2. To find the optimal process flow for optoelectronic and compound semiconductor devices. Integration with existing processing technologies
3. To specify, design and build a pilot line to demonstrate Kontrox in up to 8” substrates.
4. To validate the technology and equipment with semiconductor devices from industrial partners.
The technology has been validated with industrial partners in different application areas, having demonstrated up to 250% higher efficiency and up to 90x less power consumption in microLEDs, up to 50% increase in edge emitting laser power outputs combined with important lifetime and reliability improvements, and we have demonstrated significant decrease in material surface/interface defects, leading to performance improvements in transistor related applications.
The targets of this project are to validate the technology for industrial applications, implement it into existing manufacturing flows and combine it with existing processes. Ie. Thin film deposition techniques. We aim to demonstrate that Kontrox is an applicable and scalable process for multiple materials and applications, while meeting the semiconductor industry requirements.
The objectives set in the project are:
1. Establish partnerships with key stakeholders: chip manufacturers, equipment manufacturers, and suppliers of specialty materials
2. To find the optimal process flow for optoelectronic and compound semiconductor devices. Integration with existing processing technologies
3. To specify, design and build a pilot line to demonstrate Kontrox in up to 8” substrates.
4. To validate the technology and equipment with semiconductor devices from industrial partners.
Exhaustive work has been done to fix an optimal high-level process flow that would serve multiple applications. To achieve this, several processing capabilities were implemented into 3 existing processing reactors at Comtpek (1 for substrates up to 4", other for 3", and the last one to process small samples or chips ). We were able to test and validate different combinations of sub-processes (wet and dry cleaning steps, different sources/mechanisms of oxidation, etc), for several types of materials and devices. While obtaining a single process flow that could serve many applications resulted almost impossible, we have identified a combination of processes with a minimum amount of HW components that offers a versatile platform that can be adjusted for multiple target devices. This process consists in:
1.- a Preparation step, that takes place mostly outside the Kontrox processing chamber,
2.- the Passivation step, which includes the proprietary Kontrox step that happens in UHV conditions,
3.- an overcoating step. ALD has been identified as the most promising overcoating method for the application areas under scope.
This main process will set the technical specifications for the pilot line. The applications and materials will determine the particular process parameters, what type of preparation step is needed, what particular chemicals etc. Additionally, the Kontrox process might need to be implemented in different ways.
We have defined 2 clear process flows, one for µLEDs / power electronics chips on full wafer scale, and another for passivation of edge emitting lasers, applied to final chip structures.
This process flows and processing parameter ranges have been the basis for the list of technical requirements for the pilot line.
A pilot line has been designed and built to implement Kontrox(tm) technology in substrates of up to 200mm based on the process requirements identified in the first half of the project period. It integrates via high vacuum connection the Kontrox reactor, with Plasma Enhanced Atomic Layer Deposition system (PE-ALD) and also with a inert atmosphere glove box with wet etching capabilities. With this pilot line we are able to develop and perform complex passivation stacks and solutions for multiple semicopnductor chip structures.
The process has been validated in 200mm substrates for µLEDs and for III-N wafers for RF and power electronic applications
The Kontrox reactor has been designed and optimized to be as energy efficient as possible, trying to reduce the high energy consumption levels that are associated to these type of processes (passivation, thin film growth, etc)
1.- a Preparation step, that takes place mostly outside the Kontrox processing chamber,
2.- the Passivation step, which includes the proprietary Kontrox step that happens in UHV conditions,
3.- an overcoating step. ALD has been identified as the most promising overcoating method for the application areas under scope.
This main process will set the technical specifications for the pilot line. The applications and materials will determine the particular process parameters, what type of preparation step is needed, what particular chemicals etc. Additionally, the Kontrox process might need to be implemented in different ways.
We have defined 2 clear process flows, one for µLEDs / power electronics chips on full wafer scale, and another for passivation of edge emitting lasers, applied to final chip structures.
This process flows and processing parameter ranges have been the basis for the list of technical requirements for the pilot line.
A pilot line has been designed and built to implement Kontrox(tm) technology in substrates of up to 200mm based on the process requirements identified in the first half of the project period. It integrates via high vacuum connection the Kontrox reactor, with Plasma Enhanced Atomic Layer Deposition system (PE-ALD) and also with a inert atmosphere glove box with wet etching capabilities. With this pilot line we are able to develop and perform complex passivation stacks and solutions for multiple semicopnductor chip structures.
The process has been validated in 200mm substrates for µLEDs and for III-N wafers for RF and power electronic applications
The Kontrox reactor has been designed and optimized to be as energy efficient as possible, trying to reduce the high energy consumption levels that are associated to these type of processes (passivation, thin film growth, etc)
During this period, we have optimized and validated particular processes for 2 types of µLEDs (GaN had InGaAlP based) and for 1 material set for power electronic applications.
Results obtained for µLEDs have been very successful; consistent improvements in electroluminescence performance, and in wall plug efficiency have been demonstrated by industrial partners, with 4" wafer samples. For power electronic materials, very high quality interfaces have been obtained when combining Kontrox with ALD, what resulted in improvement in the electrical properties.
In addition to µLEDs and power electronics, We have also identified and developed a unique process flow specifically for the passivation of edge-emitting lasers. This process flow and the equipment to implement differ considerably from the other applications previously discussed, and also it requires quite different equipment. In this particular area, Comptek has filed 2 patents covering such processes and equipment. In this area, very prominent increase in power output levels have been validated by industrial partner in chips that are currently in production.
The pilot line has been successfully built and is already being piloted by industrial partners. There has been IP generated during the project, that is related not only to processes but also to equipment configurations and to some specific components.
Results obtained for µLEDs have been very successful; consistent improvements in electroluminescence performance, and in wall plug efficiency have been demonstrated by industrial partners, with 4" wafer samples. For power electronic materials, very high quality interfaces have been obtained when combining Kontrox with ALD, what resulted in improvement in the electrical properties.
In addition to µLEDs and power electronics, We have also identified and developed a unique process flow specifically for the passivation of edge-emitting lasers. This process flow and the equipment to implement differ considerably from the other applications previously discussed, and also it requires quite different equipment. In this particular area, Comptek has filed 2 patents covering such processes and equipment. In this area, very prominent increase in power output levels have been validated by industrial partner in chips that are currently in production.
The pilot line has been successfully built and is already being piloted by industrial partners. There has been IP generated during the project, that is related not only to processes but also to equipment configurations and to some specific components.