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Content archived on 2024-04-30

Novel magnetic nano devices of artificially layered materials

Objective

Therefore the project objective includes the assessment of the application potential of these devices for future Information Technology application areas. Our project is a necessary research effort to secure state-of-the-art technologies for future industrial applications and anticipates to expected developments in the fastly evolving field of magnetic and magneto-optical recording.

The following devices are envisaged to be important candidates for future applications:

Perpendicular magneto resistance device.
Due to spin dependent scattering, strong magneto resistance effects in metallic multilayers can be obtained when the current is directed perpendicularly to the multilayer stack. We aim at realising advanced perpendicular magneto resistance devices, by growing multilayers at an angle on a substrate which is patterned into V-shaped grooves or by nanostructuring devices in magnetic multilayers using electron-beam and focused ion-beam lithography.

Hybrid ferromagnet/semiconductor spin-switch; Light-induced spin-switch. Strong spin dependent effects will occur by the injection of polarised electrons from a semiconductor into a ferromagnetic metal. We will concentrate our studies on the transport properties at the interface between a semiconductor and a magnetic material.

Spin-polarised Tunnel device
This is a device based on the mechanism of spin-polarised tunnelling of electrons through an insulating or semiconducting barrier in between ferromagnetic electrodes. Also magnetic oxidic films are included here.

For all device options the realisation strategy will involve several phases. In the initial phase the efforts will be directed to fabrication of the relevant semiconducting, metallic or oxidic layered structures with state-of-the-art deposition techniques and the development of subsequent or simultaneous patterning technology. In a subsequent phase the physical properties and particularly the transport characteristics will provide feedback to the basic physical insight and optimise the device fabrication process. In the final phase of the project the various optimised device structures will be evaluated with respect to their application potential for incorporation in future recording systems.
This project is a long-term research project under the reactive scheme and is focused on new promising developments in the field of magneto resistive sensing devices for industry. These are needed for future thin film recording read heads, which are key components for high density magnetic recording of audio, video and data.
The project aims to develop novel, prototypical nano- and micro structured thin film magnetic sensing devices with potentially enhanced sensitivity by exploitation of the spin-polarised transport properties of thin atomically engineered layered magnetic materials. The project will be focused on devices which can be used as magneto resistive and magneto-optical read devices in future data storage systems.

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Keywords

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Topic(s)

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Funding Scheme

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Coordinator

Nederlandse Philips Bedrijven Bv
EU contribution
No data
Address
Prof. Holstlaan 4
5656 AA Eindhoven
Netherlands

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Total cost

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Participants (5)

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