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Advanced GaInAs-Based Devices for High-Speed Integrated Circuits

Objective

The GIANTS project aimed to examine the high-speed performance of a number of GaInAs novel transistors. State-of-the-art circuits for IT systems were to be produced using those devices exhibiting the greatest performance potential and suitability for integration. GaInAs-based material structures were investigated because of their considerably superior transport properties compared to conventional GaAs structures (eg higher electron mobility and higher electron saturation velocity). These advantages are expected to lead to a new generation of high-speed devices and circuits.
The device types initially chosen for investigation were pseudomorphic high electron mobility transistors (HEMT), lattice matched HEMTs, barrier enhanced metal semiconductor field effect transistors (MESFET), and pseudomorphic semiconductor insulator semiconductor field effect transistors (SISFET). Both metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) epitaxial growth techniques are being used to produce high quality material for device fabrication. These growth processes are being optimised in the light of device results.

The best of these devices have now been selected for the initial development of integrated circuit technologies, which will be demonstrated by the design and fabrication of example integrated circuits (IC).

The project aimed to examine the high speed performance of a number of gallium indium arsenic novel transistors. State of the art circuits for information technology (IT) systems were to be produced using those devices exhibiting the greatest performance potential and suitability for integration.

The device types chosen for investigations were:
pseudomorphic high electron mobility transistors (HEMT) (gallium indium arsenic channels grown strained on gallium arsenic substrates);
lattice matched HEMTs (aluminium indium arsenic barriers and gallium indium arsenic channels grown lattice matched on indium phosphorus substrates);
gallium indium arsenic junction field effect transistors (JFET);
pseudomorphic gallium indium arsenic channel semiconductor insulator semiconductor field effect transistors (SISFET) on gallium arsenic or indium phosphorous substrates;
barrier enhanced field effect transisitors (FET) and gallium indium arsenic.

Examples of novel gallium indium arsenic transistors have been produced with microwave performances approaching world records. These devices were compared at a later stage for their use in the project's final demonstrators:
a broadband 30 GHz amplifier;
a 1 to 2 GHz pulse regenerator circuit;
a 30 GHz divider;
inverter and ring oscillator circuits.

The project was completed successfully with all the demonstrators established. These could later form the basis of the building blocks for specific information technology (IT) subsystems.
The device types chosen for investigation were:

- pseudomorphic HEMTs: GaInAs channels grown strained on GaAs substrates
- lattice-matched HEMTs: AlInAs barriers and GaInAs channels grown lattice-matched on InP substrates
- GaInAs junction FETs (JFETs)
- pseudomorphic GaInAs channel SISFETs on GaAs or InP substrates
- barrier-enhanced FETs and GaInAs.

Coordinator

GEC Plessey Semiconductors plc
Address
Caswell
NN12 8EQ Towcester
United Kingdom

Participants (7)

FARRAN TECHNOLOGY
Ireland
Address
Ballincollig
Cork
FORTH RESEARCH CENTER OF CRETE
Greece
Address
Madzapetaki, 21, 1385
71110 Heraklion
Laboratoire d'Électronique Philips
France
Address
22 Avenue Descartes
94453 Limeil-brevannes
PICOGIGA
France
Address
5 Rue De La Reunion
91952 Les Ulis
Thomson CSF
France
Address
Domaine De Corbeville
91404 Orsay
UNIVERSITAT POLITECNICA DE MADRID
Spain
Address
Campus De Montegancedo
28660 Madrid
Université de Lille I (Université des Sciences et Technologies de Lille Flandres Artois)
France
Address
Domaine Universitaire Scientifique
59655 Villeneuve D'ascq