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Hot cluster for integrated vapour phases cleaning and processing of dielectrics and insitu doped polysilicon

Objective

- To establish sequential processes including rapid thermal clean (RTC), DRAM or EEPROM stack (Rapid Thermal Oxidation/Nitration: RTO/N) and rapid CVD of doped poly or nitride (RTCVD).

- To examine technical processes, equipment economics (CoO) and reliability for the hot processing cluster-tool.

- To compare technological performance and economics of the cluster tool with standard batch processing.

The performance of a four port hot cluster delivered by ASMI (platform and CVD modules) and by AST (RTP modules) will be assessed at SIEMENS in Munich. The final goal is to demonstrate technological superiority of clustered single wafer processing of very thin films over batch processes. This should lead to competitive cost of ownership figures even with lower throughput for single wafer processing.

Funding Scheme

ACM - Preparatory, accompanying and support measures

Coordinator

Siemens Ag, Semiconductor Group
Address
Balanstrasse 73
81541 Muenchen
Germany