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Gallium arsenide material for microwave applications

Objective

- Establishing a reliable European source for 4" semi-insulating GaAs substrate fabrication, optimised for ion implantation applications. Comparison of 3" and 4" state-of-the-art world market material.

- Epi-ready wafers directly usable for an MBE process. Attention will be paid to the requirements on geometry and surface conditions.

- Production and qualification of high performance 4" MBE-grown P-HEMT epiwafers. Tests will be performed by a device supplier (SIE) to evaluate the material quality.

- Comparison of the P-HEMT structures grown by MOVPE and MBE processes. In addition, application and quality as factors in production will be addressed.

- Establishing a European commercial source of GaInP/GaAs HBT epitaxial wafers. Evaluation and characterisation of materials developed by EPI and IAF by the industrial users in their standard production lines.

GaAs technology for both discrete and IC components has proved to be indispensable for advanced telecommunication and automotive systems. The use of GaAs clearly starts where the silicon ends i.e. in meeting system requirements such as the RF front-end of mobile communication equipment, broadband radio links and anti-collision systems.
The main interest of this project is to develop and qualify semi-insulating bulk GaAs and epitaxial material for three major microwave applications: MESFETs, pseudomorphic HEMTs and GaInP-HBTs; and to establish competitive European production facilities in those domains.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

Laboratoires D'electronique Philips
Address
Avenue Descartes 22
94453 Limeil Brevannes
France

Participants (13)

Daimler-Benz
Germany
Address
Epplestrasse - P.o. Box 2360 225
70546 Stuttgart
Epitaxial Products International Ltd
United Kingdom
Address
Cypress Drive St Mellons
CF3 0EG Cardiff
Ferdinand-Braun-Institut fur Hochstfrequenztechnik Berlin (Fbh)
Germany
Address
Rudower Chaussee 5
12489 Berlin
Foundation of Research and Technology - Hellas (Forth)
Greece
Address
Vassilika Vouton
GR 711 10 Heraklion
Fraunhofer-Inst.Fuer Angewandte Festkorperphysik
Germany
Address
Tullastrasse 72
79108 Freiburg
Freiberger Compound Materials Gmbh
Germany
Address
Berthelsforder Strasse 113
09599 Freiberg
Gec - Marconi Limited Acting Through Its Management Company Gec-Marconi Materials Technology
United Kingdom
Address

NN12 8EQ Caswell Towcester
PICOGIGA
France
Address
5 Rue De La Reunion
91952 Les Ulis
Siemens Ag
Germany
Address
Wittelsbacher Platz 2
D-80333 Munich
Thomson-Csf Lcr
France
Address
Domaine De Corbeville
91404 Orsay
Thomson-Csf Semiconductors Specifiques
France
Address
Boulevard Haussmann 173
75415 Paris
UNITED MONOLITHIC SEMICONDUCTORS GMBH
Germany
Address
Wilhelm-runge-strasse 11
Ulm
United Monolithic Semiconductors Sas
France
Address
Route Departementale 128
91400 Orsay