Gallium arsenide material for microwave applications

Objective

- Establishing a reliable European source for 4" semi-insulating GaAs substrate fabrication, optimised for ion implantation applications. Comparison of 3" and 4" state-of-the-art world market material.

- Epi-ready wafers directly usable for an MBE process. Attention will be paid to the requirements on geometry and surface conditions.

- Production and qualification of high performance 4" MBE-grown P-HEMT epiwafers. Tests will be performed by a device supplier (SIE) to evaluate the material quality.

- Comparison of the P-HEMT structures grown by MOVPE and MBE processes. In addition, application and quality as factors in production will be addressed.

- Establishing a European commercial source of GaInP/GaAs HBT epitaxial wafers. Evaluation and characterisation of materials developed by EPI and IAF by the industrial users in their standard production lines.

GaAs technology for both discrete and IC components has proved to be indispensable for advanced telecommunication and automotive systems. The use of GaAs clearly starts where the silicon ends i.e. in meeting system requirements such as the RF front-end of mobile communication equipment, broadband radio links and anti-collision systems.
The main interest of this project is to develop and qualify semi-insulating bulk GaAs and epitaxial material for three major microwave applications: MESFETs, pseudomorphic HEMTs and GaInP-HBTs; and to establish competitive European production facilities in those domains.

Fields of science

• natural sciences › chemical sciences › inorganic chemistry › post-transition metals
• natural sciences › mathematics › pure mathematics › geometry
• natural sciences › chemical sciences › inorganic chemistry › metalloids

Programme(s)

• FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998

Topic(s)

• 2.14 - Semiconductors-Enhancement of technology & manufacturing base

Call for proposal

Data not available

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

Laboratoires D'electronique Philips

Address

Avenue Descartes 22
94453 Limeil Brevannes
France

Participants (13)

Daimler-Benz

Germany

Address

Epplestrasse - P.o. Box 2360 225
70546 Stuttgart

Epitaxial Products International Ltd

United Kingdom

Address

Cypress Drive St Mellons
CF3 0EG Cardiff

Ferdinand-Braun-Institut fur Hochstfrequenztechnik Berlin (Fbh)

Germany

Address

Rudower Chaussee 5
12489 Berlin

Foundation of Research and Technology - Hellas (Forth)

Greece

Address

Vassilika Vouton
GR 711 10 Heraklion

Fraunhofer-Inst.Fuer Angewandte Festkorperphysik

Germany

Address

Tullastrasse 72
79108 Freiburg

Freiberger Compound Materials Gmbh

Germany

Address

Berthelsforder Strasse 113
09599 Freiberg

Gec - Marconi Limited Acting Through Its Management Company Gec-Marconi Materials Technology

United Kingdom

Address

NN12 8EQ Caswell Towcester

PICOGIGA

France

Address

5 Rue De La Reunion
91952 Les Ulis

Siemens Ag

Germany

Address

Wittelsbacher Platz 2
D-80333 Munich

Thomson-Csf Lcr

France

Address

Domaine De Corbeville
91404 Orsay

Thomson-Csf Semiconductors Specifiques

France

Address

Boulevard Haussmann 173
75415 Paris

UNITED MONOLITHIC SEMICONDUCTORS GMBH

Germany

Address

Wilhelm-runge-strasse 11
Ulm

United Monolithic Semiconductors Sas

France

Address

Route Departementale 128
91400 Orsay