Skip to main content

Automotive Tested High-voltage Embedded Non-volatile memory Integrated SoC


Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

Auteurs: Jason T. Ryan; Hubert Enichlmair; Patrick M. Lenahan; Tibor Grasser
Identifiant permanent: Digital Object Identifier:10.1063/1.3428783

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

Auteurs: P.-J. Wagner; B. Kaczer; Tibor Grasser; Hans Reisinger
Identifiant permanent: Digital Object Identifier:10.1103/physrevb.82.245318

Recovery-free electron spin resonance observations of NBTI degradation

Auteurs: Patrick M. Lenahan; Jason T. Ryan; Tibor Grasser; Hubert Enichlmair
Publié dans: IEEE 2010
Identifiant permanent: Digital Object Identifier:10.1109/irps.2010.5488854

MEMS technology integrated in the CMOS back end

Auteurs: Mickael Renault; Anartz Unamuno; Dennis J. Yost; Vikram Joshi; D. Lacey; R. van Kampen; Richard L. Knipe; Charles G. Smith; R. Gaddi
Identifiant permanent: Digital Object Identifier:10.1016/j.microrel.2010.07.113

Recovery of negative and positive bias temperature stress in pMOSFETs

Auteurs: Ph. Hehenberger; Hans Reisinger; Tibor Grasser
Identifiant permanent: Digital Object Identifier:10.1109/iirw.2010.5706473

An advanced description of oxide traps in MOS transistors and its relation to DFT

Auteurs: Tibor Grasser; F. Schanovsky; W. Gos
Identifiant permanent: Digital Object Identifier:10.1007/s10825-010-0323-x

On an improved boron segregation calibration from a particularly sensitive power MOS process

Auteurs: Martin Schrems; Massimo Bersani; M. Sekowski; Damiano Giubertoni; Martin Knaipp; S. Koffel; Y. Yamamoto; D. Bolze; Alexander Burenkov; Peter Pichler; Peter Pichler; Ewald Wachmann
Identifiant permanent: Digital Object Identifier:10.1002/pssc.201300152

Recent advances in understanding the bias temperature instability

Auteurs: Tibor Grasser; F. Schanovsky; Wolfgang Goes; B. Kaczer; P.-J. Wagner; Ph. J. Roussel; Ph. Hehenberger; Th. Aichinger; Jacopo Franco; Michael Nelhiebel; Hans Reisinger
Publié dans: IEEE 2011
Identifiant permanent: Digital Object Identifier:10.1109/iedm.2010.5703295

Multiphonon hole trapping from first principles

Auteurs: Tibor Grasser; F. Schanovsky; W. Gos
Publié dans: American Vacuum Society 2011
Identifiant permanent: Digital Object Identifier:10.1116/1.3533269

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices

Auteurs: #N/D

A 120V 180nm High Voltage CMOS smart power technology for System-on-chip integration

Auteurs: #N/D

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

Auteurs: Tibor Grasser
Publié dans: Elsevier BV 2011
Identifiant permanent: Digital Object Identifier:10.1016/j.microrel.2011.09.002

A CMOS compatible back end MEMS switch for logic functions

Auteurs: Rob van Kampen; Vikram Joshi; Damian Lacey; Farkas Csaszar; Dennis J. Yost; Charles G. Smith; Richard L. Knipe; Cong Quoc Khieu; Cor Schepens; Toshi Nagata; Mickael Renault
Identifiant permanent: Digital Object Identifier:10.1109/iitc.2010.5510694

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Auteurs: Wolfgang Goes; Hans Reisinger; B. Kaczer; P.-J. Wagner; F. Schanovsky; Tibor Grasser
Publié dans: Institute of Electrical and Electronics Engineers (IEEE) 2010
Identifiant permanent: Digital Object Identifier:10.1109/irps.2010.5488859

Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology

Auteurs: Lothar Frey; Anton J. Bauer; Tobias Erlbacher
Identifiant permanent: Digital Object Identifier:10.1109/led.2010.2043049

An analytical approach for physical modeling of hot-carrier induced degradation

Auteurs: Stanislav Tyaginov; Tibor Grasser; E. Seebacher; Ivan A. Starkov; Jong Mun Park; Ch. Jungemann; Hubert Enichlmair; Roberto Lacerda de Orio; Hajdin Ceric
Publié dans: Elsevier BV 2011
Identifiant permanent: Digital Object Identifier:10.1016/j.microrel.2011.07.089

On the 'permanent' component of NBTI

Auteurs: Grasser T.; Aichinger Th.; Reisinger H.; Franco J.; Wagner P.-J.; Nelhiebel M.; Ortolland C.; Kaczer B.