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Preparing Complex Nanostructures by Atomic Layer Deposition


During the fellowship, novel, beyond the-state-of-the-art complex nanostructures will be prepared by atomic layer deposition (ALD). ALD is based on successive, alternating surface controlled reactions from the gas phase to produce thin films in the nanometer range with perfect conformality, process controllability and precise control of film thickness. In this project, four complex nanocomposites and nanoreplicas will be prepared: (1) Semiconductor oxide core-shell structures (WO3 nanotube core with TiO2 oute shell) will be prepared for photocatalysis. It will be investigated, how the photocatalytic activity can be tuned by the thickness of the outer TiO2 layer. (2) Carbon nanotube (CNT) – multilayer semiconductor oxide (SnO2, In2O3, TiO2) core-shell structures will be prepaped for selective gas sensing at room temperature. The effect of composition and thickness of semiconductor oxide outer shells on gas sensing will be explored. (3) 2D and 3D Al2O3 nanotubes will be prepared by using a template with 2D and 3D nanoholes. After removing the template, the 2D and 3D nanotubes will be set free. (4) The TiO2replica of biological structures (lotus leaf) with a complex nanostructured surface will be prepared. The hydropobic and photocatalytic features of the as-produced multifunctional material will be tuned by its thickness. The new nanomaterials and new preparation approaches have a high potential to lead to new products and technologies. The training objective of the fellowship is to provide the fellow the neccessary skills to start a new ALD research group. A thourough theoretical and practical training on ALD will be obtained (planning and conducting ALD experiments, analytical tools for characterizing ALD films, listening to courses on ALD and nanotechnology). Supplementary skills will be also provided (managing an ALD laboratory, conference organizing, supervising BSc and MSc students, oral and written presentation, knowledge of Finnish language).

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Yliopistonkatu 3
00014 Helsingin Yliopisto
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 184 759,18
Administrative Contact
Katariina Vainio-Mattila (Ms.)