Description du projet
FET Open
This project will demonstrate an integrated terahertz (THz) emitter at room temperature, based on a parametric optical process in an AlGaAs device.
This project will demonstrate an integrated terahertz (THz) emitter at room temperature, based on a parametric optical process in an AlGaAs device, combining strong material nonlinearity and high optical confinement. The approach followed is based on a quasi-phasematching scheme in the whispering-gallery cavity of a microcylinder containing self-assembled quantum-dots. Compared to existing THz sources like photoconductive antennas, photo-mixers, quantum cascade lasers and optical parametric generators, the TREASURE source will bring together several crucial advantages: room-temperature operation, electrical pumping, compactness, THz power above ~0.3 µW from a single emitter (1 µW in an array) , custom emission wavelength, spectral purity, an the perspectives of coherent detection and two-dimensional array schemes. This will be accomplished with the complementary competences of four world-class research groups, plus an industrial partner, leader in the THz technology.
Champ scientifique
Appel à propositions
FP7-ICT-2009-C
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Régime de financement
CP - Collaborative project (generic)Coordinateur
F-75205 / 13 Paris
France