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Electronic Transport in Topological Insulator Hybrid Devices


The proposal outlines an experimental program targeted at fabricating and investigating high quality electronic devices based on Topological Insulators (TIs). The program relies on a fabrication technique based on stacking of exfoliated single crystals in an inert atmosphere. The devices proposed are few layer heterostructures including TIs, graphene, and dielectrics such as hexagonal Boron Nitride (h-BN). This technique allows for diverse types of devices, with the potential of addressing a broad range of physical effects. One such device is the TI-hBN heterostructure, which can serve as a field-effect device, where preliminary data shows an unprecedented level of tunability of a high mobility surface. These devices will allow the investigation of transport effects such the Quantum Hall Effect, the TI-superconductor proximity effect, and investigations on the role of interactions in TI surface transport. Other devices proposed are TI-graphene hybrids, where the TI can serve as a spin-injection element, and TI interfaces with materials hosting more exotic phases. The program is aimed at creating a fundamentally new set of capabilities which would open new avenues of research in condensed matter physics.

Call for proposal

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Edmond j safra campus givat ram
91904 Jerusalem

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Activity type
Higher or Secondary Education Establishments
Administrative Contact
Hani Ben-Yehuda (Ms.)
EU contribution
€ 100 000,00