The overall objective of COSMIC was the development of GaAs MMICs for microwave communication systems up to 23 GHz.
The overall objective is the devleopment of gallium arsenide monolithic microwave integrated circuits (MMIC) for microwave communication systems up to 23 GHz. Multifunction MMIC in metal semiconductor field effect transistor (MESFET)/high electron mobility transistor (HEMT) technology, which are complete or core parts of receiver units, will be realised. The systems to be considered are: rural and suburban point to multipoint services, global positioning systems, European cordless telephone, high speed optical transmissions and direct (satellite) broadcast systems (DBS).
Improvements in some basic properties of the following central issues are necessary: MESFET/HEMT small signal and noise models, on wafer noise measurements, enhanced molecular beam epitaxy (MBE) MESFET/HEMT layer growth, enhanced SAG MESFET/HEMT technology and enhanced high packing density MMIC technology.
Examples of major results already demonstrated are: circuit designs with different types of transimpedance amplifiers, LNA/mixer for global positioning system (GPS)/global system for mobile communications (GSM), LNA for L-band point to multipoint applications and DBS LNC; and technology which has produced the first MESFET/HEMT wafers with enhanced MBE growth, a new HEMT process in sidewall spacer technique, a HPD test mask set, with on wafer near field (NF)-measurement technique started and physical noise model development started.
Multifunction MMICs in MESFET/HEMT technology, which are complete or core parts of receiver units, were realised. The systems considered were:
- rural and suburban point-to-multipoint services
- global positioning systems
- European cordless telephone
- high-speed optical transmissions
- direct (satellite) broadcast systems (DBS).
Improvements in some basic properties of the following central issues were considered necessary:
- MESFET/HEMT small-signal and noise models
- on-wafer noise measurements
- enhanced MBE MESFET/HEMT layer growth
- enhanced SAG MESFET/HEMT technology
- enhanced high packing density MMIC technology
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