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GaAs Monolithic Analogue Circuits for Microwave Communication Systems up to 23 GHz

Objective

The overall objective of COSMIC was the development of GaAs MMICs for microwave communication systems up to 23 GHz.
The overall objective is the devleopment of gallium arsenide monolithic microwave integrated circuits (MMIC) for microwave communication systems up to 23 GHz. Multifunction MMIC in metal semiconductor field effect transistor (MESFET)/high electron mobility transistor (HEMT) technology, which are complete or core parts of receiver units, will be realised. The systems to be considered are: rural and suburban point to multipoint services, global positioning systems, European cordless telephone, high speed optical transmissions and direct (satellite) broadcast systems (DBS).
Improvements in some basic properties of the following central issues are necessary: MESFET/HEMT small signal and noise models, on wafer noise measurements, enhanced molecular beam epitaxy (MBE) MESFET/HEMT layer growth, enhanced SAG MESFET/HEMT technology and enhanced high packing density MMIC technology.
Examples of major results already demonstrated are: circuit designs with different types of transimpedance amplifiers, LNA/mixer for global positioning system (GPS)/global system for mobile communications (GSM), LNA for L-band point to multipoint applications and DBS LNC; and technology which has produced the first MESFET/HEMT wafers with enhanced MBE growth, a new HEMT process in sidewall spacer technique, a HPD test mask set, with on wafer near field (NF)-measurement technique started and physical noise model development started.
Multifunction MMICs in MESFET/HEMT technology, which are complete or core parts of receiver units, were realised. The systems considered were:

- rural and suburban point-to-multipoint services
- global positioning systems
- European cordless telephone
- high-speed optical transmissions
- direct (satellite) broadcast systems (DBS).

Improvements in some basic properties of the following central issues were considered necessary:

- MESFET/HEMT small-signal and noise models
- on-wafer noise measurements
- enhanced MBE MESFET/HEMT layer growth
- enhanced SAG MESFET/HEMT technology
- enhanced high packing density MMIC technology

Coordinator

SIEMENS AG
Address
Wittelsbacherplatz
80333 Muenchen
Germany

Participants (10)

ARGUMENS
Germany
Address
Bismarckstraße 67
47057 Duisburg
FORTH RESEARCH CENTER OF CRETE
Greece
Address
Madzapetaki, 21, 1385
71110 Heraklion
GEC Plessey Semiconductors plc
United Kingdom
Address
Caswell
NN12 8EQ Towcester
JANSEN MICROWAVE
Germany
Address
Neanderstraße 5
40878 Ratingen
POLITECNICO DI TORINO
Italy
Address
Corso Duca Degli Abruzzi 24
10129 Torino
TELEFONICA
Spain
Address
Emilio Vargas, 6
28043 Madrid
TELETTRA ESPANA SA
Spain
Address
Cantabria, 51
28042 Madrid
Telettra SpA
Italy
Address
Viale Fulvio Testi 136
20092 Cinisello Balsamo Milano
UNIVERSITAT POLITECNICA DE MADRID
Spain
Address
Campus De Montegancedo
28660 Madrid
Università degli Studi di Roma La Sapienza
Italy
Address
Piazzale Aldo Moro 5
00185 Roma