Objective Modern optoelectronic (OE) devices such as light-emitting or photovoltaic diodes offer exciting opportunities for the future. A wide range of materials has been utilized in these devices, including among others: organic materials, inorganic quantum dots and hybrid perovskites. While the functionality, performance and device physics vary strongly from material to material and device to device, all OE devices depend on the energy levels of their individual components and the interaction of the electronic states at the various heterointerfaces. Lacking a method to map the energy levels in a device, energy level diagrams reported for most devices consist of a combination of individual energy levels for each material, which neglect interactions between the materials (that may cause interfacial dipoles and/or band bending) and do not represent the true energetic landscape. Despite this, they are routinely used for interpretation of device performance and physics.This project aims to map the energy levels in real functional devices: revealing the true nature of buried interfaces, multilayers and contacts, and to answer fundamental long-standing questions in the field of OE, such as the origin of photovoltage losses and energetics of injection/extraction contacts of devices. We will develop and utilize a “Ultra-violet photoemission spectroscopy (UPS) depth profiling” technique based on the combination of UPS with Ar gas cluster ion beam (GCIB) etching that induces minimal surface damage, on a wide range of organic, inorganic and hybrid materials and devices. We will reveal the true energy level landscapes of devices and monitor their evolution throughout the device lifetime. Furthermore, we will explore the possibility to expand the use of GCIB etching beyond UPS as a new nanofabrication technique. These studies will open new frontiers in OE research and would allow the development of novel interface engineering approaches, device architectures and material design rules. Fields of science natural sciencesphysical sciencesopticsspectroscopy Keywords Ultra-violet photoemission spectroscopy gas cluster ion beam etching depth profiling optoelectronic devices heterointerfaces energy levels Programme(s) H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC) Main Programme Topic(s) ERC-2016-STG - ERC Starting Grant Call for proposal ERC-2016-STG See other projects for this call Funding Scheme ERC-STG - Starting Grant Coordinator TECHNISCHE UNIVERSITAET DRESDEN Net EU contribution € 1 316 306,00 Address Helmholtzstrasse 10 01069 Dresden Germany See on map Region Sachsen Dresden Dresden, Kreisfreie Stadt Activity type Higher or Secondary Education Establishments Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Other funding € 0,00 Beneficiaries (2) Sort alphabetically Sort by Net EU contribution Expand all Collapse all TECHNISCHE UNIVERSITAET DRESDEN Germany Net EU contribution € 1 316 306,00 Address Helmholtzstrasse 10 01069 Dresden See on map Region Sachsen Dresden Dresden, Kreisfreie Stadt Activity type Higher or Secondary Education Establishments Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Other funding € 0,00 RUPRECHT-KARLS-UNIVERSITAET HEIDELBERG Participation ended Germany Net EU contribution € 181 625,00 Address Seminarstrasse 2 69117 Heidelberg See on map Region Baden-Württemberg Karlsruhe Heidelberg, Stadtkreis Activity type Higher or Secondary Education Establishments Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Other funding € 0,00
