Objectif Future IC manufacturing processes will demand significant improvements in the purity of the starting material and better control of individual process steps. Typical metal concentrations in starting bulk Si material are currently of the order of 1E11 to 1E12 cm{-3}. Improvements of one to two orders of magnitude are required for advanced IC devices. In order to meet this technological goal, new analytical strategies need to be developed. The overall objective of DIASYSCON is to develop an easy-to-use advanced diagnostic system for ultra low metal contamination control, based on injection scanning life-time imaging combined with a new generation of monitor wafers. This system will be applied in case studies from wafer-manufacturing, IC production and process development, and is expected to lead to significant improvements in IC yields.Rapid advances have been made in the application of injection scanning techniques to problems of metal contamination of semiconductor material in a wide variety of technologically relevant situations. Working with a prototype system, methods for the detection, discrimination and imaging of iron boride, iron-1 and oxygen precipitates in concentrations below 1010 cm{3} have been worked out. Highly sensitive CZ silicon wafers have been produced with minority carrier diffusion lengths of greater than 2 mm. In addition to this, an effective increase in system sensitivity of 35 times has been demonstrated. Special monitor wafers for the detection of low levels of copper and nickel have been developed. 'Precipitation hard' CZ silicon wafers were demonstrated to be highly effective in the investigation of contamination in nearly arbitrary process conditions, including extremely long, high temperature processes. An important spin off has led to processes for the production of a precision controlled precipitation wafer.A four-step approach has been adopted: - development of injection-level lifetime analysis and imaging techniques - their hardware and software development - minority carrier lifetime improvements in silicon wafer manufacturing and the production of lifetime test monitor wafers - application case studies focussed on contamination control and process improvement in IC fabrication lines. Champ scientifique engineering and technologymechanical engineeringmanufacturing engineeringnatural scienceschemical sciencesinorganic chemistrytransition metalsnatural sciencescomputer and information sciencessoftwaresoftware developmentsocial sciencessociologysocial issuessocial inequalitiesnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994 Thème(s) Data not available Appel à propositions Data not available Régime de financement Data not available Coordinateur Memc Materiali Elettronici SpA Contribution de l’UE Aucune donnée Adresse Viale Gherzi 31 28100 Novara Italie Voir sur la carte Coût total Aucune donnée Participants (3) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Commissariat à l'Energie Atomique (CEA) France Contribution de l’UE Aucune donnée Adresse Centre d'Études de Grenoble 17 avenue des Martyrs 38041 Grenoble Voir sur la carte Coût total Aucune donnée GESELLSCHAFT FÜR MESSTECHNIK AND TECHNOLOGIE Allemagne Contribution de l’UE Aucune donnée Adresse GERETSRIEDER STRAßE, 10A 81379 München Voir sur la carte Coût total Aucune donnée Thomson Microelectronics Srl (SGS) Italie Contribution de l’UE Aucune donnée Adresse Via Carlo Olivetti 20041 Agrate Brianza Milano Voir sur la carte Coût total Aucune donnée