Periodic Reporting for period 1 - SiLAS (SiliconLaser)
Reporting period: 2017-01-01 to 2018-12-31
The primary objective of this project is to provide a pathway for green ICT, in which energy consumption is considerable reduced by replacing copper wiring by optical interconnects which are powered by silicon compatible light emitters. A silicon compatible light source for silicon photonic integrated circuits will not only find applications for optical interconnects, but might also provide a lightsource for silicon photonics. As a final possible application, we like to mention an integrated SiGe lightsource for disposable sensors. When the expensive III/V laser can be replaced by a SiGe lightsource, these sensors might find applications for medical diagnostics, remote sensing and food safety.
• It has been unambiguously determined that hexagonal silicon-germanium (Hex-SiGe) is a direct bandgap semiconductor for Ge-compositions above approximately ~70%.
• We strongly improved the crystal quality of our Hex-SiGe nanowire shells.
• We demonstrated tuning of the direct bandgap emission between 3.5 µm and < 2.0 µm. The experimental results are perfectly in agreement with our theoretical calculations.
• We experimentally obtained substantial evidence for direct bandgap emission.
• We realized room temperature emission of Hex-Ge.
• Preliminary results indicate amplified spontaneous emission in Hex-Ge