TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns

The TARANTO project targets to break the technological barriers to the development of the next BiCMOS technology
platforms, allowing the improvement of the performance of the HBT (Heterojunction Bipolar Transistors) with a much
higher level of integration. This new generation of transistors HBT will be a key factor to meet the needs of highspeed
communications systems and high data rate required for the integration of heterogeneous intelligent systems
as well as for intelligent mobility systems that will be used in future fully automated transport systems. The main
objectives of this project will be to develop transistors HBT offering high maximum frequency (Fmax: 600GHz) built
to very high density CMOS processes: 130 / 90nm for IFX, 55 / 28nm to ST, while IHP will work on the project to
achieve maximum frequencies of 700GHz remaining compatible with IFX and ST BiCMOS processes.
The project consortium gathers the main European players in the value chain for these applications at very high
frequencies, from laboratories to industrial users, thus ensuring the highest scientific level and the ability to validate
the work carried out on appropriate demonstrators.

For the development of the next industrial bipolar technology, IHP, IFD and IFAG continued their investigations on performance enhancements of the HBT concept with epitaxial base link (EBL) in joint fabrication runs. The focus of WP1 in the reporting period 04/2019 to 03/2020 was on the tape-outs of the second design cycles in Infineon and ST technologies and the corresponding wafer fabrication runs. All partners worked on the further optimization of the SiGe HBT device performance in order to make a step towards the final performance goal. The details of this investigations are described in the deliverable report D1.1.4 “Report on device optimizations towards Fmax = 600GHz”. Additionally, the work on the heterogeneous integration studies have been completed by Infineon and ST. The results are documented in the deliverable report D1.4.2 “Report on heterogeneous integration studies”. the main technocal achievements during the period were: Infineon has demonstrated SiGe HBTs with fT of 300GHz and fmax of 530GHz in 130nm BiCMOS, and fT of 300GHz and an fmax of 480GHz in 90nm. Infineon and ST have done the tape-out and the wafer fabrication runs for the second design cycle. Infineon delivered the chips to the partners in WP2 and WP3. ST demonstrated a record power density of 30.1mW/µm² at 94GHz; a SSTI module has been developed to improve fMAX of ST B55X technology, and several process issues (lack of inside spacers, poor emitter silicidation) affecting ST EXBIC architecture have been solved.
IHP has demonstrated HBTs with fT / fMAX values of 470GHz / 610GHz in a 130nm BiCMOS process. The Optimization of the HBT architecture with selective epitaxial growth (SEG) of the base and epitaxial base link (EBL) in joint wafer fabrications of Infineon and IHP resulted in improved RF performance of 330GHz fT.
The feasibility of heterogeneous integration of SiGe MMICs with other chips in an eWLB package has been successfully demonstrated by Infineon, whereas heterogeneous integration study conducted ST concluded that Hybrid Bonding solution looks the most promising.

for the WP2,the objectives and global achievements for the whole work package during the period have been: TCAD developments in order to allow advanced SiGe HBT simulation including reliability studies. Dedicated characterization tools develoments from DC to 500GHz. Transistor and Passives models developments and extraction on manufactured Silicon. All the work dedicated to characterization and modelling of 1st silicon run has been finalized with the delivery of: D2.2.1: Characterization report on HBT 1st development delivered M26 / D2.3.1: Modelling report on 1st development silicon of HBT and Passives devices delivered M26
At the same time, the 2nd mask sets at IFAG and STMicroelectronics have been designed, assembled for manufacturing and characterization is running. Those characterization runs will enable modelling and PDK delivery of the 2nd HBT and Passives silicon runs.

Then, for the WP3, subsystem and circuit specifications have been derived, and Integrated Circuit design activity has been started in both Infineon B11HFC and ST BiCMOS55 technologies in order to provide innovative components needed to compose the defined Smart Systems. A first set of integrated circuits has been produced in B11HFC, and in BiCMOS55 technologies. Their assessment has started and finished for certain building blocks, and verification with the models developped by the partners in WP2 has been done. Chips evaluation is going on while the demonstrators and testbed integration have been started. Circuits designs have been done for the second runs of the technolgies B11HFC and B55, and for the new ones B12HFC and B55X. Some of these circuits have been characterized. NOKIA has set up a testbed and completed extensive electrical and optical experiments on manufactured TARANTO ICs for both A/D and D/A Conversion, demonstrating new speed world records.

The superior highfrequency performance of SiGe HBTs facilitates the integration of RF
functionalities on smart electronic chips with a performance that cannot been reached
even using the most advanced pure CMOS technologies in the near future, while the
combination of HBTs and CMOS allows to optimize both analog and digital
performances.
TARANTO aims at further strengthening the leading position of the European
semiconductor industry in SiGe BiCMOS technology and at providing a solid
industrial base for the development of new products in areas such as
telecommunications, home electronics, and car electronics which are of key importance
for Europe’s high-tech industries.
The first results confirm the positioning

Periodic Reporting for period 4 - TARANTO (TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns)

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