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Far-infrared Lasers Assembled using Silicon Heterostructures

Objective

The THz part of the electromagnetic spectrum (0.3-10 THz) is currently exploited in commercial security screening systems (weapon detection beneath clothes), medical diagnostics tools (skin and breast cancer, burns, and in ophthalmology) and production-line monitoring (non-destructive test in the pharmaceutical industry). Existing sources of THz radiation are still too large and expensive to be a massively deployed in all of the existing and proposed applications, which include large bandwidth wireless communications and the extension of security screening to far-infrared spectroscopic identification of chemicals and explosives up to 10 THz. A lower production cost, a higher level of integration with control electronics, and a broader range of emitted wavelength are all desirable to expand the application of THz radiation.
FLASH, will develop a room-temperature THz laser integrated on Si using CMOS technology-compatible processes and materials. The laser, of quantum cascade type, will be assembled using newly developed conduction-band germanium-rich heterostructures. It will leverage on the non-polar nature of silicon and germanium crystal lattices to potentially enabling room temperature operation, and will emit over 1 mW of power in the 1-10 THz range. In perspective, the development of the SiGe heterostructure platform will pave the way towards the new field of nonlinear silicon photonics based on band-structure engineering. The consortium includes EU leaders in silicon chip manufacturing, Si/SiGe/Ge epitaxial material growth, laser and band structure modelling, quantum cascade laser design and terahertz/infrared spectroscopy.
The proposed device can provide a step-change in compactness, reduced cost, and functionality of source performance, thus enabling large scale use of terahertz radiation in existing fields of application, and open up new fields of application not yet commercially exploited, such as wireless communication and security imaging.

Call for proposal

H2020-FETOPEN-2016-2017

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Sub call

H2020-FETOPEN-1-2016-2017

Coordinator

UNIVERSITA DEGLI STUDI ROMA TRE
Net EU contribution
€ 837 587,50
Address
Via Ostiense 133
00154 Roma
Italy

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Region
Centro (IT) Lazio Roma
Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00

Participants (4)

UNIVERSITY OF GLASGOW
United Kingdom
Net EU contribution
€ 749 580,00
Address
University Avenue
G12 8QQ Glasgow

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Region
West Central Scotland Glasgow City
Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Germany
Net EU contribution
€ 640 250,00
Address
Im Technologiepark 25
15236 Frankfurt Oder

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Region
Brandenburg Brandenburg Oder-Spree
Activity type
Other
Other funding
€ 0,00
EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH
Switzerland
Net EU contribution
€ 671 581,25
Address
Raemistrasse 101
8092 Zuerich

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Region
Schweiz/Suisse/Svizzera Zürich Zürich
Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00
NEXTNANO GMBH
Germany
Net EU contribution
€ 307 500,00
Address
Sudmahrenstr 21
85586 Poing

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Bayern Oberbayern Ebersberg
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 0,00