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High performant Wide Band Gap Power Electronics for Reliable, energy eFficient drivetrains and Optimization thRough Multi-physics simulation

Periodic Reporting for period 3 - HiPERFORM (High performant Wide Band Gap Power Electronics for Reliable, energy eFficient drivetrains and Optimization thRough Multi-physics simulation)

Reporting period: 2020-05-01 to 2021-10-31

The European and global automotive industry currently faces the challenge of reducing CO2 emissions, since improving air quality and avoiding global warming is high priority on the agendas not only in Europe, but also in the rest of the world. With a share of approximately 23%, the transportation system in Europe contributes significantly to the total greenhouse gas emissions and global warming. By a tremendous increase of affordable and efficient electric and hybrid vehicles, Europe can pave the way for a decarbonized transport system. Nevertheless, this is only one of many important measures that are needed to fight global warming.

HiPERFORM will directly address this topic by investigating the industrial applicability of high-performance semiconductors with wide-band gap materials in the field of Smart Mobility. For this purpose, a holistic approach is selected including the entire supply chain - from the manufacturer of semiconductors as well as power modules through suppliers of development methods and tools to the system and ultimately the vehicle manufacturers. The integration of academic partners with a high level of competence in these domains completes this approach. On the other hand, specific requirements for power electronics are addressed in specific application areas, which include both power inverters in the vehicle, electrical charging modules inside and outside the vehicle, as well as the associated development and test systems.

Therefore the project objectives for the HiPERFORM project can be summarized as following:
- Investigation on manufacturing processes and integration methods for GaN and SiC power switches for cost reduction and highest reliability
- Architectures and controllers which support highest frequencies in the e-powertrain of up to 50kHz to enable more efficient powertrains and up to 500kHz for usage in test systems
- Inverters, chargers and test systems for electric drivetrains with higher efficiency up to 98%, respectively 50% less spatial volume, less weight and less costs than today.

The expected project results will enable the European manufactures of WBG-based electric vehicle components, charging devices, and test systems to deliver excellent technologies for the automotive industry, to develop next generation affordable green vehicles. Affordable electric and hybrid vehicles will pave the way for the envisioned green transportation system. All citizens will directly benefit from longer driving ranges, less energy consumption, and lower prices due to the advanced technologies in next generation electric vehicles. Moreover, the European electronic components industry and system suppliers will tremendously profit from the expected results in this research project. The outcome will also safeguard current jobs as well as build the base for further growth in all sectors.
WP1
Specification of Use Cases (D1.1) including detailed Requirements (D1.2)
Demonstrator integration in all UCs completed and successfully evaluated.
All Results are presented in D1.3 and D1.4
WP2
100V GaN HEMT and 200V GaN HEMT fully functional samples were delivered
650V pGaN HEMT delivered
Increased breakdown voltages (reliability) for GaN components: results reaching a breakdown voltage of 1200 V is demonstrated and reported
WP3
New gate drivers for SiC DSC module developed and tested
Work on optimized cooling concepts for the WBG converters in different use cases completed
WP4
Second generation of DSC-module build established and prototypes available
3D thermal modeling for power modules was done
Reliability tests performed and lifetime models derived
Cooler prototypes built
WP5
Architectures / models for inverter, charger and test systems elaborated
Electrical and mechanical design of the 1200V and 1700V DC/DC SiC demonstrator completed; 100/200V GaN demonstrator completed
Inverter-Concepts realized
Design and Development of off- and on-board charger completed
WP6
Setup of project organization and initiation of close collaboration of all partners
Setup of dissemination activities and raising public awareness: 35 disseminiation activities in Y3 - in total 115 activities.
Final Project Video for sharing the outcomes to the public.
Final exploitation plan prepared

Overview on Results and Exploitation (Details please refer to D1.3 / D1.4 / D6.9)
UC1: 3 electrification test system demonstrators (200V / 1200V / 1700V DC/DC converter) implemented and successfully tested; utilitzation of outcome towards new products under preparation
UC2: demonstration of p-GaN gate power HEMTs on GaN-on-poly-AlN substrates up to 650 V breakdown voltage and extension towards 1200 V; GaN IC design is made possible with different voltage pockets suited for half-bridge configurations with a low-side and a high-side switch.
UC3: two traction inverters realized; demonstration of the advantages of using DSC-SiC-Modules in a traction inverter application; new innovative cooler design
UC4: dual inverter based on SiC with highest power density developed; integration into a vehicle demonstrator with new powertrain using two in-wheel motors; according testbench developed; telematics unit including cloud platform for data analysis available.
UC5: 11kW OBC with high power density and specific power based on GaN developed;
UC6: demonstration of SiC based off board charger with 50% reduced volume of the powertrain and significant lower power losses; developed charger in the loop test system.
* Epitaxial film growth of sputter deposited AlN films on Si(111) at high deposition rates
* Optimized process to prepare base material to reduce defect density.
* GaN epitaxy on CTE matched QST substrates developed towards higher VBD and lower growth time
* Fabricated devices on GaN buffers grown on CTE matched substrate (QST), towards increased breakdown voltages (reliability) for GaN components
* Demonstration of 650V GaN HEMTs reaching electrical performance and reliability specifications.
* Development of 1200V rated epi stack of GaN-on-poly-AlN and of first 1200V devices.
* GaN IC design is made possible with different voltage pockets suited for half-bridge configurations with a low-side and a high-side switch
* 100V GaN HEMT and fully functional 200V GaN HEMT samples were delivered
* a production worthy rugged pGaN technology at 650V for automotive applications has been developed in a silicon fab
* First european double sided cooled 1200V SiC Module available as a second generation prototype
* First version of optimization framework design tool for optimal PE topology design available
* Next generation of electrification test systems for the application towards wide band gap based power electronics
* New and highly innovative inverter concepts based on SiC, having low stray inductance and highest efficiency, by high power density and specific power
* Demonstration of GaN in an OBC application, with high power density and specific power
* Off board charger with SiC technology to reduce the powertrain volume by 50%

Based on these results, the path towards the reduction of costs and an increase in reliability for GaN devices was paved and the possibilities were shown.
Additionally, the newly developed SiC module will allow for higher efficiency, higher switching frequencies and hence reduced volumes of power electronic components.
The implemented demonstrators clearly show the benefits of wide bandgap semiconductors and all details can be found in D1.4.